Composite-collector InGaP/GaAs HBTs for linear power amplifiers

The linear operation of a HBT with a GaAs/InGaP composite collector structure is demonstrated. The composite collector structure allows for a thin collector design that is suitable for the linear operation of a HBT without critical degradation of the breakdown voltage. The load pull measurements under a 1.95 GHz WCDMA signal have shown that a composite-collector HBT with a 400-nm thick collector layer operates with power-added-efficiency (PAE) as high as 53% at V(CE) = 3.5 V as a result of improved distortion characteristics. Despite the thin collector design, collector-emitter breakdown voltage of 11V was achieved even at current density of 10 kA/cm². The composite-collector HBT has even greater advantage for future low voltage (< 3 V) applications where maintaining PAE and linearity becomes one of the critical issues.