Control of Threshold Voltage of AlGaAs/GaAs 2DEG FET's through Heat Treatment

Y. Takanashi, M. Hirano, T. Sugeta

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Threshold voltage controls of Ni/Ti/Au gate and Ti/Au gate 2DEG AlGaAs/GaAs FET's through only heat treatment are investigated. Ni/Ti/Au gate FET's vary over quite a wide range from a depletion mode to an enhancement mode without degradation of FET characteristics after heat treatment at 300°C. The same experiment is made for Ti/Au gate FET's, but the threshold voltage change is negligibly small. It is confirmed that Ni/Ti/Au can be used as the gate metal for E-FET and Ti/Au as the gate metal for D-FET under simultaneous heat treatment. In addition, a mechanism for penetrating the barrier metal into the underlying layer is discussed.

Original languageEnglish
Pages (from-to)241-243
Number of pages3
JournalIEEE Electron Device Letters
Volume5
Issue number7
DOIs
Publication statusPublished - 1984 Jul
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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