Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor

Erika Maeda, Toshihide Nabatame, Masafumi Hirose, Mari Inoue, Akihiko Ohi, Naoki Ikeda, Hajime Kiyono

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor'. Together they form a unique fingerprint.

Engineering & Materials Science

Chemical Compounds

Physics & Astronomy