TY - JOUR
T1 - Crystallization of Ge thin films by Au-induced layer exchange
T2 - Effect of Au layer thickness on Ge crystal orientation
AU - Sunthornpan, Narin
AU - Kimura, Kenjiro
AU - Kyuno, Kentaro
N1 - Publisher Copyright:
© 2022 The Japan Society of Applied Physics.
PY - 2022/2
Y1 - 2022/2
N2 - Au layer thickness dependence (9-34 nm) of Ge crystallization in the metal-induced layer exchange process has been investigated. It has been found that Ge crystals are (111) oriented when the Au layer is as thin as 9 nm, whereas crystal grains are randomly oriented when the Au layer is as thick as 34 nm. The difference is discussed in terms of the difference in the position of nucleation sites of Ge crystals.
AB - Au layer thickness dependence (9-34 nm) of Ge crystallization in the metal-induced layer exchange process has been investigated. It has been found that Ge crystals are (111) oriented when the Au layer is as thin as 9 nm, whereas crystal grains are randomly oriented when the Au layer is as thick as 34 nm. The difference is discussed in terms of the difference in the position of nucleation sites of Ge crystals.
KW - Au-induced layer exchange
KW - Crystallization
KW - Germanium
KW - Low-temperature crystallization
KW - Metal-induced crystallization (MIC)
KW - Semiconductor
UR - http://www.scopus.com/inward/record.url?scp=85125525599&partnerID=8YFLogxK
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U2 - 10.35848/1347-4065/ac2419
DO - 10.35848/1347-4065/ac2419
M3 - Article
AN - SCOPUS:85125525599
SN - 0021-4922
VL - 61
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
M1 - SB1029
ER -