DC characteristics in high-quality AlGaN/AlN/GaN high-electron-mobility transistors grown on AIN/sapphire templates

Engineering & Materials Science

• Sapphire 100%
• High electron mobility transistors 86%
• Two dimensional electron gas 52%
• Metallorganic vapor phase epitaxy 26%
• Ohmic contacts 22%
• Substrates 21%
• Drain current 19%
• Transconductance 17%
• Threshold voltage 16%
• Leakage currents 16%
• Crystals 14%
• Current density 14%
• Fabrication 11%

Physics & Astronomy

• high electron mobility transistors 77%
• templates 69%
• sapphire 63%
• direct current 58%
• gas density 17%
• transconductance 16%
• vapor phase epitaxy 15%
• electron gas 14%
• threshold voltage 14%
• high current 13%
• electric contacts 13%
• leakage 12%
• current density 10%
• fabrication 9%
• crystals 7%