Design and fabrication of a millimeter-wave MMIC HBT VCO with consideration for modulation linearity and low phase noise

Tomoya Kaneko; Koki Tanji; Yasushi Amamiya; Takaki Niwa; Hidenori Shimawaki; Shinichi Tanaka; Kenzo Wada

Design and fabrication of a millimeter-wave MMIC HBT VCO with consideration for modulation linearity and low phase noise

Tomoya Kaneko, Koki Tanji, Yasushi Amamiya, Takaki Niwa, Hidenori Shimawaki, Shinichi Tanaka, Kenzo Wada

Research output: Contribution to journal › Article › peer-review

Abstract

A 38 GHz-band MMIC (Monolithic Microwave Integrated Circuit) VCO (Voltage Controlled Oscillator) has been developed for the millimeter wave radio communications systems, using the AlGaAs/InGaAs HBT (Hetero Bipolar Transistor). There are the p⁺/p re-grown base contact and several other technologies in fabrication process of HBT used for realizing low 1/f noise of the oscillation transistor. Furthermore, unique circuit technology to maximize the quality-factor of a resonator and a base-collector junction diode p-n varactor are designed for the low phase noise characteristics and the linear frequency modulation characteristics. The MMIC HBT VCO exhibit a phase noise of 85 dBc/Hz at 100 KHz off the carrier and a frequency modulation linearity of less than 3.6%p-p with the maximum frequency deviation of 37.5 MHz at 38 GHz band.

Original language	English
Pages (from-to)	44-48
Number of pages	5
Journal	NEC Research and Development
Volume	41
Issue number	1
Publication status	Published - 2000 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "Design and fabrication of a millimeter-wave MMIC HBT VCO with consideration for modulation linearity and low phase noise",

abstract = "A 38 GHz-band MMIC (Monolithic Microwave Integrated Circuit) VCO (Voltage Controlled Oscillator) has been developed for the millimeter wave radio communications systems, using the AlGaAs/InGaAs HBT (Hetero Bipolar Transistor). There are the p+/p re-grown base contact and several other technologies in fabrication process of HBT used for realizing low 1/f noise of the oscillation transistor. Furthermore, unique circuit technology to maximize the quality-factor of a resonator and a base-collector junction diode p-n varactor are designed for the low phase noise characteristics and the linear frequency modulation characteristics. The MMIC HBT VCO exhibit a phase noise of 85 dBc/Hz at 100 KHz off the carrier and a frequency modulation linearity of less than 3.6%p-p with the maximum frequency deviation of 37.5 MHz at 38 GHz band.",

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AU - Kaneko, Tomoya

AU - Tanji, Koki

AU - Amamiya, Yasushi

AU - Niwa, Takaki

AU - Shimawaki, Hidenori

AU - Tanaka, Shinichi

AU - Wada, Kenzo

PY - 2000/1/1

Y1 - 2000/1/1

N2 - A 38 GHz-band MMIC (Monolithic Microwave Integrated Circuit) VCO (Voltage Controlled Oscillator) has been developed for the millimeter wave radio communications systems, using the AlGaAs/InGaAs HBT (Hetero Bipolar Transistor). There are the p+/p re-grown base contact and several other technologies in fabrication process of HBT used for realizing low 1/f noise of the oscillation transistor. Furthermore, unique circuit technology to maximize the quality-factor of a resonator and a base-collector junction diode p-n varactor are designed for the low phase noise characteristics and the linear frequency modulation characteristics. The MMIC HBT VCO exhibit a phase noise of 85 dBc/Hz at 100 KHz off the carrier and a frequency modulation linearity of less than 3.6%p-p with the maximum frequency deviation of 37.5 MHz at 38 GHz band.

AB - A 38 GHz-band MMIC (Monolithic Microwave Integrated Circuit) VCO (Voltage Controlled Oscillator) has been developed for the millimeter wave radio communications systems, using the AlGaAs/InGaAs HBT (Hetero Bipolar Transistor). There are the p+/p re-grown base contact and several other technologies in fabrication process of HBT used for realizing low 1/f noise of the oscillation transistor. Furthermore, unique circuit technology to maximize the quality-factor of a resonator and a base-collector junction diode p-n varactor are designed for the low phase noise characteristics and the linear frequency modulation characteristics. The MMIC HBT VCO exhibit a phase noise of 85 dBc/Hz at 100 KHz off the carrier and a frequency modulation linearity of less than 3.6%p-p with the maximum frequency deviation of 37.5 MHz at 38 GHz band.

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Design and fabrication of a millimeter-wave MMIC HBT VCO with consideration for modulation linearity and low phase noise

Abstract

ASJC Scopus subject areas

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