TY - JOUR
T1 - Development of a compact angle-resolved secondary ion mass spectrometer for Ar+ sputtering
AU - Kawaguchi, Shinichi
AU - Tanemura, Masaki
AU - Kudo, Masato
AU - Handa, Nobumasa
AU - Kinoshita, Naokazu
AU - Miao, Lei
AU - Tanemura, Sakae
AU - Gotoh, Yasuhito
AU - Liao, Meiyong
AU - Shinkai, Satoko
PY - 2006/5/31
Y1 - 2006/5/31
N2 - A compact angle-resolved secondary ion mass spectrometer with a special geometrical configuration, composing of a differentially pumped micro-beam ion gun, a tiltable sample stage and a time-of-flight (TOF) mass spectrometer, was newly developed. This system enables the measurement of angular distribution (AD) of secondary ions, which are ejected by oblique Ar+ sputtering, by a simple tilt operation of the sample stage for ejection angles ranging from 0° to 60° with keeping the ion incidence angle constant 62°±2° from the normal to the surface. Using this system, AD of secondary ions from an HfN film by 3 keV Ar+-ion bombardment was measured at room temperature. Since the yield of HfN+ dimer ions was almost independent of Hf+ and N+ monomer ions, it was concluded that the HfN+ dimer ions were generated via the "as such" direct emission process.
AB - A compact angle-resolved secondary ion mass spectrometer with a special geometrical configuration, composing of a differentially pumped micro-beam ion gun, a tiltable sample stage and a time-of-flight (TOF) mass spectrometer, was newly developed. This system enables the measurement of angular distribution (AD) of secondary ions, which are ejected by oblique Ar+ sputtering, by a simple tilt operation of the sample stage for ejection angles ranging from 0° to 60° with keeping the ion incidence angle constant 62°±2° from the normal to the surface. Using this system, AD of secondary ions from an HfN film by 3 keV Ar+-ion bombardment was measured at room temperature. Since the yield of HfN+ dimer ions was almost independent of Hf+ and N+ monomer ions, it was concluded that the HfN+ dimer ions were generated via the "as such" direct emission process.
KW - Angular distribution
KW - Cluster
KW - Hafnium
KW - Nitride
KW - Secondary ion mass spectrometer
KW - Sputtering
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U2 - 10.1016/j.vacuum.2005.11.016
DO - 10.1016/j.vacuum.2005.11.016
M3 - Article
AN - SCOPUS:33646548967
SN - 0042-207X
VL - 80
SP - 768
EP - 770
JO - Vacuum
JF - Vacuum
IS - 7 SPEC. ISS.
ER -