Development of MEMS pierce-type nanocrystalline Si electron-emitter array for massively parallel electron beam direct writing

Hitoshi Nishino; Shinya Yoshida; Akira Kojima; Naokatsu Ikegami; Nobuyoshi Koshida; Shuji Tanaka; Masayoshi Esashi

doi:10.1109/MEMSYS.2014.6765678

Development of MEMS pierce-type nanocrystalline Si electron-emitter array for massively parallel electron beam direct writing

Hitoshi Nishino, Shinya Yoshida, Akira Kojima, Naokatsu Ikegami, Nobuyoshi Koshida, Shuji Tanaka, Masayoshi Esashi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

Abstract

This paper mainly reports the process development of a Pierce-type nanocrystalline Si (nc-Si) electron emitter array for massively parallel electron beam (EB) lithography based on active-matrix operation using a large-scaled integrated circuit (LSI). The emitter array consists of 100×100 hemispherical emitters formed by isotropic wet etching of Si. EB resist patterning was demonstrated by 1:1 projection exposure using a discrete emitter array at CMOS-compatible operation voltages. To independently control each emitter using the LSI, isolation trenches filled with benzocyclobutene (BCB) were fabricated in the Si substrate. In addition, the integration process of the emitter array, the LSI and an extraction electrode plate was developed based on Au-In and polymer bonding technologies.

Original language	English
Title of host publication	MEMS 2014 - 27th IEEE International Conference on Micro Electro Mechanical Systems
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	467-470
Number of pages	4
ISBN (Print)	9781479935086
DOIs	https://doi.org/10.1109/MEMSYS.2014.6765678
Publication status	Published - 2014
Externally published	Yes
Event	27th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2014 - San Francisco, CA, United States Duration: 2014 Jan 26 → 2014 Jan 30

Publication series

Name	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN (Print)	1084-6999

Conference

Conference	27th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2014
Country/Territory	United States
City	San Francisco, CA
Period	14/1/26 → 14/1/30

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanical Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/MEMSYS.2014.6765678

Cite this

Nishino, H., Yoshida, S., Kojima, A., Ikegami, N., Koshida, N., Tanaka, S., & Esashi, M. (2014). Development of MEMS pierce-type nanocrystalline Si electron-emitter array for massively parallel electron beam direct writing. In MEMS 2014 - 27th IEEE International Conference on Micro Electro Mechanical Systems (pp. 467-470). Article 6765678 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MEMSYS.2014.6765678

Development of MEMS pierce-type nanocrystalline Si electron-emitter array for massively parallel electron beam direct writing. / Nishino, Hitoshi; Yoshida, Shinya; Kojima, Akira et al.
MEMS 2014 - 27th IEEE International Conference on Micro Electro Mechanical Systems. Institute of Electrical and Electronics Engineers Inc., 2014. p. 467-470 6765678 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nishino, H, Yoshida, S, Kojima, A, Ikegami, N, Koshida, N, Tanaka, S & Esashi, M 2014, Development of MEMS pierce-type nanocrystalline Si electron-emitter array for massively parallel electron beam direct writing. in MEMS 2014 - 27th IEEE International Conference on Micro Electro Mechanical Systems., 6765678, Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Institute of Electrical and Electronics Engineers Inc., pp. 467-470, 27th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2014, San Francisco, CA, United States, 14/1/26. https://doi.org/10.1109/MEMSYS.2014.6765678

Nishino H, Yoshida S, Kojima A, Ikegami N, Koshida N, Tanaka S et al. Development of MEMS pierce-type nanocrystalline Si electron-emitter array for massively parallel electron beam direct writing. In MEMS 2014 - 27th IEEE International Conference on Micro Electro Mechanical Systems. Institute of Electrical and Electronics Engineers Inc. 2014. p. 467-470. 6765678. (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). doi: 10.1109/MEMSYS.2014.6765678

Nishino, Hitoshi ; Yoshida, Shinya ; Kojima, Akira et al. / Development of MEMS pierce-type nanocrystalline Si electron-emitter array for massively parallel electron beam direct writing. MEMS 2014 - 27th IEEE International Conference on Micro Electro Mechanical Systems. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 467-470 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

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abstract = "This paper mainly reports the process development of a Pierce-type nanocrystalline Si (nc-Si) electron emitter array for massively parallel electron beam (EB) lithography based on active-matrix operation using a large-scaled integrated circuit (LSI). The emitter array consists of 100×100 hemispherical emitters formed by isotropic wet etching of Si. EB resist patterning was demonstrated by 1:1 projection exposure using a discrete emitter array at CMOS-compatible operation voltages. To independently control each emitter using the LSI, isolation trenches filled with benzocyclobutene (BCB) were fabricated in the Si substrate. In addition, the integration process of the emitter array, the LSI and an extraction electrode plate was developed based on Au-In and polymer bonding technologies.",

author = "Hitoshi Nishino and Shinya Yoshida and Akira Kojima and Naokatsu Ikegami and Nobuyoshi Koshida and Shuji Tanaka and Masayoshi Esashi",

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AU - Nishino, Hitoshi

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AU - Ikegami, Naokatsu

AU - Koshida, Nobuyoshi

AU - Tanaka, Shuji

AU - Esashi, Masayoshi

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AB - This paper mainly reports the process development of a Pierce-type nanocrystalline Si (nc-Si) electron emitter array for massively parallel electron beam (EB) lithography based on active-matrix operation using a large-scaled integrated circuit (LSI). The emitter array consists of 100×100 hemispherical emitters formed by isotropic wet etching of Si. EB resist patterning was demonstrated by 1:1 projection exposure using a discrete emitter array at CMOS-compatible operation voltages. To independently control each emitter using the LSI, isolation trenches filled with benzocyclobutene (BCB) were fabricated in the Si substrate. In addition, the integration process of the emitter array, the LSI and an extraction electrode plate was developed based on Au-In and polymer bonding technologies.

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Development of MEMS pierce-type nanocrystalline Si electron-emitter array for massively parallel electron beam direct writing

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