Dielectric and electrical properties of amorphous La1-xTa xOy films as higher- k gate insulators

Yi Zhao; Koji Kita; Kentaro Kyuno; Akira Toriumi

doi:10.1063/1.3073946

Dielectric and electrical properties of amorphous La_1-xTa _xO_y films as higher- k gate insulators

Yi Zhao, Koji Kita, Kentaro Kyuno, Akira Toriumi

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

In this study, we investigated the applicability of an amorphous, high-permittivity (k) dielectric film La_1-xTa_xO _y as an alternative gate insulator in next-generation complementary metal-oxide-semiconductor devices and metal-insulator-metal capacitors. La _1-xTa_xO_y films not only show a crystallization temperature higher than 1000 °C, but also a permittivity as high as 30. La_1-xTa_xO_y films also have a much larger band gap than Ta₂O₅ films because of the coupling effect between the 5d orbitals of La and Ta atoms bonding to a common oxygen atom. Therefore, La_1-xTa_xO_y films with appropriate Ta concentration are promising amorphous high- k gate insulators.

Original language	English
Article number	034103
Journal	Journal of Applied Physics
Volume	105
Issue number	3
DOIs	https://doi.org/10.1063/1.3073946
Publication status	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Dielectric and electrical properties of amorphous La1-xTa xOy films as higher- k gate insulators",

abstract = "In this study, we investigated the applicability of an amorphous, high-permittivity (k) dielectric film La1-xTaxO y as an alternative gate insulator in next-generation complementary metal-oxide-semiconductor devices and metal-insulator-metal capacitors. La 1-xTaxOy films not only show a crystallization temperature higher than 1000 °C, but also a permittivity as high as 30. La1-xTaxOy films also have a much larger band gap than Ta2O5 films because of the coupling effect between the 5d orbitals of La and Ta atoms bonding to a common oxygen atom. Therefore, La1-xTaxOy films with appropriate Ta concentration are promising amorphous high- k gate insulators.",

author = "Yi Zhao and Koji Kita and Kentaro Kyuno and Akira Toriumi",

note = "Funding Information: This work was partly supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan and by the NEDO/MIRAI project.",

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T1 - Dielectric and electrical properties of amorphous La1-xTa xOy films as higher- k gate insulators

AU - Zhao, Yi

AU - Kita, Koji

AU - Kyuno, Kentaro

AU - Toriumi, Akira

N1 - Funding Information: This work was partly supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan and by the NEDO/MIRAI project.

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N2 - In this study, we investigated the applicability of an amorphous, high-permittivity (k) dielectric film La1-xTaxO y as an alternative gate insulator in next-generation complementary metal-oxide-semiconductor devices and metal-insulator-metal capacitors. La 1-xTaxOy films not only show a crystallization temperature higher than 1000 °C, but also a permittivity as high as 30. La1-xTaxOy films also have a much larger band gap than Ta2O5 films because of the coupling effect between the 5d orbitals of La and Ta atoms bonding to a common oxygen atom. Therefore, La1-xTaxOy films with appropriate Ta concentration are promising amorphous high- k gate insulators.

AB - In this study, we investigated the applicability of an amorphous, high-permittivity (k) dielectric film La1-xTaxO y as an alternative gate insulator in next-generation complementary metal-oxide-semiconductor devices and metal-insulator-metal capacitors. La 1-xTaxOy films not only show a crystallization temperature higher than 1000 °C, but also a permittivity as high as 30. La1-xTaxOy films also have a much larger band gap than Ta2O5 films because of the coupling effect between the 5d orbitals of La and Ta atoms bonding to a common oxygen atom. Therefore, La1-xTaxOy films with appropriate Ta concentration are promising amorphous high- k gate insulators.

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Dielectric and electrical properties of amorphous La_1-xTa _xO_y films as higher- k gate insulators

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