The bonding of InP and rare earth iron garnet grown on Gd3Ga5O12 substrate without any additional material is demonstrated. After chemical treatment, heat treatment in H2 ambient results in the bonding of the samples. This process is applicable to the integration of semiconductor and magneto-optic devices.
|Number of pages||2|
|Publication status||Published - 1995 Aug 31|
- Indium phosphide
- Wafer bonding
ASJC Scopus subject areas
- Electrical and Electronic Engineering