Direct bonding between laser wafers and magneto-optic waveguides

Hideki Yokoi; Tetsuya Mizumoto; Koichi Maru; Yoshiyuki Naito

Direct bonding between laser wafers and magneto-optic waveguides

Hideki Yokoi, Tetsuya Mizumoto, Koichi Maru, Yoshiyuki Naito

Research output: Contribution to conference › Paper › peer-review

Abstract

Wafer direct bonding is an attractive technique for the integration of different materials. In a previous study, the bonding between InP and several kinds of garnets which are essential to an optical isolator was demonstrated. When the optical isolator is integrated with the laser wafer as shown in Fig. 1, the surface of garnet wafer where a rib waveguide is formed is to be bonded with an etch stop layer for the vertical alignment. This paper reports the direct bonding between GaInAsP etch stop layer and Gd₃Ga₅O₁₂ (GGG) which is used as a substrate for magneto-optic crystal growth. The bonding is also described between InP and the garnet rib waveguide.

Original language	English
Number of pages	1
Publication status	Published - 1996 Jan 1
Externally published	Yes
Event	Proceedings of the 1996 Conference on Lasers and Electro-Optics Europe, CLEO/Europe - Hamburg, Ger Duration: 1996 Sept 8 → 1996 Sept 13

Other

Other	Proceedings of the 1996 Conference on Lasers and Electro-Optics Europe, CLEO/Europe
City	Hamburg, Ger
Period	96/9/8 → 96/9/13

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

Cite this

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title = "Direct bonding between laser wafers and magneto-optic waveguides",

abstract = "Wafer direct bonding is an attractive technique for the integration of different materials. In a previous study, the bonding between InP and several kinds of garnets which are essential to an optical isolator was demonstrated. When the optical isolator is integrated with the laser wafer as shown in Fig. 1, the surface of garnet wafer where a rib waveguide is formed is to be bonded with an etch stop layer for the vertical alignment. This paper reports the direct bonding between GaInAsP etch stop layer and Gd3Ga5O12 (GGG) which is used as a substrate for magneto-optic crystal growth. The bonding is also described between InP and the garnet rib waveguide.",

author = "Hideki Yokoi and Tetsuya Mizumoto and Koichi Maru and Yoshiyuki Naito",

year = "1996",

month = jan,

day = "1",

language = "English",

note = "Proceedings of the 1996 Conference on Lasers and Electro-Optics Europe, CLEO/Europe ; Conference date: 08-09-1996 Through 13-09-1996",

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T1 - Direct bonding between laser wafers and magneto-optic waveguides

AU - Yokoi, Hideki

AU - Mizumoto, Tetsuya

AU - Maru, Koichi

AU - Naito, Yoshiyuki

PY - 1996/1/1

Y1 - 1996/1/1

N2 - Wafer direct bonding is an attractive technique for the integration of different materials. In a previous study, the bonding between InP and several kinds of garnets which are essential to an optical isolator was demonstrated. When the optical isolator is integrated with the laser wafer as shown in Fig. 1, the surface of garnet wafer where a rib waveguide is formed is to be bonded with an etch stop layer for the vertical alignment. This paper reports the direct bonding between GaInAsP etch stop layer and Gd3Ga5O12 (GGG) which is used as a substrate for magneto-optic crystal growth. The bonding is also described between InP and the garnet rib waveguide.

AB - Wafer direct bonding is an attractive technique for the integration of different materials. In a previous study, the bonding between InP and several kinds of garnets which are essential to an optical isolator was demonstrated. When the optical isolator is integrated with the laser wafer as shown in Fig. 1, the surface of garnet wafer where a rib waveguide is formed is to be bonded with an etch stop layer for the vertical alignment. This paper reports the direct bonding between GaInAsP etch stop layer and Gd3Ga5O12 (GGG) which is used as a substrate for magneto-optic crystal growth. The bonding is also described between InP and the garnet rib waveguide.

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M3 - Paper

AN - SCOPUS:0029726353

T2 - Proceedings of the 1996 Conference on Lasers and Electro-Optics Europe, CLEO/Europe

Y2 - 8 September 1996 through 13 September 1996

ER -

Direct bonding between laser wafers and magneto-optic waveguides

Abstract

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ASJC Scopus subject areas

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