Abstract
An integrated optical isolator employing a nonreciprocal phase shift is very attractive because it does not need phase matching. We have investigated a novel configuration of the integrated optical isolator, employing the nonreciprocal phase shift, in which the magnetooptic waveguide has a magnetic garnet/GalnAsP/InP structure. The wafer direct bonding technique is necessary to realize this structure. The direct bonding between quaternary III-V compound semiconductors and garnet crystals was experimentally studied. The bonding was achieved by chemical treatment and subsequent heat treatment at temperatures ranging from 110 to 330°C. Cross-sectional scanning electron microscope (SEM) images indicated that there were no gaps between the two wafers in contact.
| Original language | English |
|---|---|
| Pages (from-to) | 195-197 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 38 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1999 |
| Externally published | Yes |
Keywords
- Magnetic garnets
- Optical isolator
- SEM
- Semiconductor
- Wafer direct bonding
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)