Drain-current collapse in AlGaN/GaN HEMTs on sapphire and semi-insulating SiC substrates

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)E-2-3
JournalDefault journal
Publication statusPublished - 2002 Sept 1

Cite this