EBIC observation of n-GaN grown on sapphire substrates by MOCVD

Kensaku Yamamoto; Hiroyasu Ishikawa; Takashi Egawa; Takashi Jimbo; Masayoshi Umeno

doi:10.1016/S0022-0248(98)00203-6

EBIC observation of n-GaN grown on sapphire substrates by MOCVD

Kensaku Yamamoto, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Si-doped GaN layers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) and characterized by using electron beam-induced current (EBIC) and molten KOH etching. Dark spot densities in EBIC image are be 1.0 and 1.2 × 10⁸ cm^-2 depending on the accelerating voltage. The dark spots in EBIC image correspond to recombination centers. When we compare dark spot density with etch pit density revealed molten KOH, this is the same order as the EPD revealed by molten KOH. We confirm there are many dislocations which influence recombination of minority carriers in the layers.

Original language	English
Pages (from-to)	575-579
Number of pages	5
Journal	Journal of Crystal Growth
Volume	189-190
DOIs	https://doi.org/10.1016/S0022-0248(98)00203-6
Publication status	Published - 1998 Jun 15
Externally published	Yes

Keywords

Defect
EBIC
Etch pit density
Nonradiative recombination
Schottky diodes
Si-doped GaN

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(98)00203-6

Cite this

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title = "EBIC observation of n-GaN grown on sapphire substrates by MOCVD",

abstract = "Si-doped GaN layers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) and characterized by using electron beam-induced current (EBIC) and molten KOH etching. Dark spot densities in EBIC image are be 1.0 and 1.2 × 108 cm-2 depending on the accelerating voltage. The dark spots in EBIC image correspond to recombination centers. When we compare dark spot density with etch pit density revealed molten KOH, this is the same order as the EPD revealed by molten KOH. We confirm there are many dislocations which influence recombination of minority carriers in the layers.",

keywords = "Defect, EBIC, Etch pit density, Nonradiative recombination, Schottky diodes, Si-doped GaN",

author = "Kensaku Yamamoto and Hiroyasu Ishikawa and Takashi Egawa and Takashi Jimbo and Masayoshi Umeno",

note = "Funding Information: The authors wish to thank K. Nakamura for helping our experiments. This work was partially supported by a Grant-in-Aid for Scientific Research (c) (09650049) from The Ministry of Education, Science, Sports and Culture.",

year = "1998",

month = jun,

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doi = "10.1016/S0022-0248(98)00203-6",

language = "English",

volume = "189-190",

pages = "575--579",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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TY - JOUR

T1 - EBIC observation of n-GaN grown on sapphire substrates by MOCVD

AU - Yamamoto, Kensaku

AU - Ishikawa, Hiroyasu

AU - Egawa, Takashi

AU - Jimbo, Takashi

AU - Umeno, Masayoshi

N1 - Funding Information: The authors wish to thank K. Nakamura for helping our experiments. This work was partially supported by a Grant-in-Aid for Scientific Research (c) (09650049) from The Ministry of Education, Science, Sports and Culture.

PY - 1998/6/15

Y1 - 1998/6/15

N2 - Si-doped GaN layers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) and characterized by using electron beam-induced current (EBIC) and molten KOH etching. Dark spot densities in EBIC image are be 1.0 and 1.2 × 108 cm-2 depending on the accelerating voltage. The dark spots in EBIC image correspond to recombination centers. When we compare dark spot density with etch pit density revealed molten KOH, this is the same order as the EPD revealed by molten KOH. We confirm there are many dislocations which influence recombination of minority carriers in the layers.

AB - Si-doped GaN layers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) and characterized by using electron beam-induced current (EBIC) and molten KOH etching. Dark spot densities in EBIC image are be 1.0 and 1.2 × 108 cm-2 depending on the accelerating voltage. The dark spots in EBIC image correspond to recombination centers. When we compare dark spot density with etch pit density revealed molten KOH, this is the same order as the EPD revealed by molten KOH. We confirm there are many dislocations which influence recombination of minority carriers in the layers.

KW - Defect

KW - EBIC

KW - Etch pit density

KW - Nonradiative recombination

KW - Schottky diodes

KW - Si-doped GaN

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VL - 189-190

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EP - 579

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

EBIC observation of n-GaN grown on sapphire substrates by MOCVD

Abstract

Keywords

ASJC Scopus subject areas

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