TY - JOUR
T1 - Effect of gold layer thickness on the low-temperature crystallization process of germanium thin films by gold-induced crystallization
AU - Sunthornpan, Narin
AU - Tauchi, Kohtaroh
AU - Tezuka, Nairu
AU - Kyuno, Kentaro
N1 - Publisher Copyright:
© 2020 The Japan Society of Applied Physics.
PY - 2020/8/1
Y1 - 2020/8/1
N2 - The effect of Au layer thickness (1, 2.5, 5, 7.5 and 10 nm) on the low-temperature crystallization of Ge thin films (30 nm) was examined. It is found that the best Ge crystallinity is achieved at an Au layer thickness of 2.5 nm. This finding will open up the possibility to reduce the amount of Au consumption in the low-temperature crystallization process of Ge thin films.
AB - The effect of Au layer thickness (1, 2.5, 5, 7.5 and 10 nm) on the low-temperature crystallization of Ge thin films (30 nm) was examined. It is found that the best Ge crystallinity is achieved at an Au layer thickness of 2.5 nm. This finding will open up the possibility to reduce the amount of Au consumption in the low-temperature crystallization process of Ge thin films.
UR - http://www.scopus.com/inward/record.url?scp=85089983950&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85089983950&partnerID=8YFLogxK
U2 - 10.35848/1347-4065/aba63d
DO - 10.35848/1347-4065/aba63d
M3 - Article
AN - SCOPUS:85089983950
SN - 0021-4922
VL - 59
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 8
M1 - 080904
ER -