Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition

Shrikant Saini; Paolo Mele; Shunsuke Osugi; Malik I. Adam

doi:10.1007/s11665-018-3601-6

Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO₂ Films Fabricated by Pulsed Laser Deposition

Shrikant Saini, Paolo Mele, Shunsuke Osugi, Malik I. Adam

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We focus on the growth of p-type CuAlO₂ thin films and its thermoelectric properties. Thin films are deposited by pulsed laser deposition technique on single-crystal sapphire substrates varying the oxygen partial pressure. Thin film deposited at oxygen partial pressure of 200 mTorr presents bigger grains (about 10 μm in size) and shows Seebeck coefficient as high as 270 µV/K with a conductivity of about 0.8 S/cm so that its power factor is about 5.7 µW/mK² at 800 K, twice than observed in the film deposited at 60 mTorr of oxygen.

Original language	English
Pages (from-to)	6286-6290
Number of pages	5
Journal	Journal of Materials Engineering and Performance
Volume	27
Issue number	12
DOIs	https://doi.org/10.1007/s11665-018-3601-6
Publication status	Published - 2018 Dec 1

Keywords

CuAlO
heat harvesting
oxides
pulsed laser deposition
thermoelectrics
thin films

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1007/s11665-018-3601-6

Cite this

@article{78bcb7c7bc8b43c993bc085b089496eb,

title = "Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition",

abstract = "We focus on the growth of p-type CuAlO2 thin films and its thermoelectric properties. Thin films are deposited by pulsed laser deposition technique on single-crystal sapphire substrates varying the oxygen partial pressure. Thin film deposited at oxygen partial pressure of 200 mTorr presents bigger grains (about 10 μm in size) and shows Seebeck coefficient as high as 270 µV/K with a conductivity of about 0.8 S/cm so that its power factor is about 5.7 µW/mK2 at 800 K, twice than observed in the film deposited at 60 mTorr of oxygen.",

keywords = "CuAlO, heat harvesting, oxides, pulsed laser deposition, thermoelectrics, thin films",

author = "Shrikant Saini and Paolo Mele and Shunsuke Osugi and Adam, {Malik I.}",

note = "Funding Information: This work was partially supported by Research Center for Environmentally Friendly Materials Engineering of Muroran Institute of Technology in the framework of {\textquoteleft}{\textquoteleft}Internal Internship program F.Y. 2017-2018{\textquoteright}{\textquoteright}. S.S., P.M., and S.O. are grateful to Prof. Hideaki Takano of Department of Applied Sciences, Muroran Institute of Technology, for his warm encouragements. S.S. and P.M. thank Dr. Alok K. Jha (Kyushu Institute of Technology) for providing the thickness measurements. Publisher Copyright: {\textcopyright} 2018, ASM International.",

year = "2018",

month = dec,

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doi = "10.1007/s11665-018-3601-6",

language = "English",

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T1 - Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition

AU - Saini, Shrikant

AU - Mele, Paolo

AU - Osugi, Shunsuke

AU - Adam, Malik I.

N1 - Funding Information: This work was partially supported by Research Center for Environmentally Friendly Materials Engineering of Muroran Institute of Technology in the framework of ‘‘Internal Internship program F.Y. 2017-2018’’. S.S., P.M., and S.O. are grateful to Prof. Hideaki Takano of Department of Applied Sciences, Muroran Institute of Technology, for his warm encouragements. S.S. and P.M. thank Dr. Alok K. Jha (Kyushu Institute of Technology) for providing the thickness measurements. Publisher Copyright: © 2018, ASM International.

PY - 2018/12/1

Y1 - 2018/12/1

N2 - We focus on the growth of p-type CuAlO2 thin films and its thermoelectric properties. Thin films are deposited by pulsed laser deposition technique on single-crystal sapphire substrates varying the oxygen partial pressure. Thin film deposited at oxygen partial pressure of 200 mTorr presents bigger grains (about 10 μm in size) and shows Seebeck coefficient as high as 270 µV/K with a conductivity of about 0.8 S/cm so that its power factor is about 5.7 µW/mK2 at 800 K, twice than observed in the film deposited at 60 mTorr of oxygen.

AB - We focus on the growth of p-type CuAlO2 thin films and its thermoelectric properties. Thin films are deposited by pulsed laser deposition technique on single-crystal sapphire substrates varying the oxygen partial pressure. Thin film deposited at oxygen partial pressure of 200 mTorr presents bigger grains (about 10 μm in size) and shows Seebeck coefficient as high as 270 µV/K with a conductivity of about 0.8 S/cm so that its power factor is about 5.7 µW/mK2 at 800 K, twice than observed in the film deposited at 60 mTorr of oxygen.

KW - CuAlO

KW - heat harvesting

KW - oxides

KW - pulsed laser deposition

KW - thermoelectrics

KW - thin films

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