Effect of substrate on thermoelectric properties of Al-doped ZnO thin films

P. Mele, S. Saini, H. Honda, K. Matsumoto, K. Miyazaki, H. Hagino, A. Ichinose

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87 Citations (Scopus)


We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 (STO) and Al2O3 substrates by Pulsed Laser Deposition technique at various deposition temperatures (Tdep = 300°C-600°C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K-600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400°C. Best film is the fully c-axis oriented AZO/STO deposited at 300°C, which epitaxial strain and dislocation density are the lowest: electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K, and power factor 0.13 × 10-3 W m-1 K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to 0.55 × 10 -3 W m-1 K-2 at 600 K, surpassing the best AZO film previously reported in literature.

Original languageEnglish
Article number253903
JournalApplied Physics Letters
Issue number25
Publication statusPublished - 2013 Jun 24
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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