Effects of Argon Gas Flow Rate and Furnace Pressure on Oxygen Concentration in Czochralski-Grown Silicon Crystals

Masahiro Shoji, Naoki Ono, Keisei Abe, Michio Kida, Yasuo Shimizu

Research output: Contribution to journal › Article › peer-review

Cite this

@article{bf1b4be54dbd4ffa9b87bd0ebcdfa60f,

title = "Effects of Argon Gas Flow Rate and Furnace Pressure on Oxygen Concentration in Czochralski-Grown Silicon Crystals",

author = "Masahiro Shoji and Naoki Ono and Keisei Abe and Michio Kida and Yasuo Shimizu",

year = "1997",

month = aug,

day = "28",

language = "English",

volume = "186",

pages = "362--368",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Effects of Argon Gas Flow Rate and Furnace Pressure on Oxygen Concentration in Czochralski-Grown Silicon Crystals

AU - Shoji, Masahiro

AU - Ono, Naoki

AU - Abe, Keisei

AU - Kida, Michio

AU - Shimizu, Yasuo

PY - 1997/8/28

Y1 - 1997/8/28

M3 - Article

SN - 0022-0248

VL - 186

SP - 362

EP - 368

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -