Abstract
We analyze AlGaN/GaN HEMTs with a buffer layer where a deep acceptor above the midgap is considered, and studied how the off-state breakdown voltage is influenced by introducing a high-k passivation layer. As a result, it is shown that the breakdown voltage improves as in a case with a deep donor whose energy level is set equal to the acceptor's energy level, and in this case the breakdown voltage becomes a little higher in the region where the relative permittivity of the passivation layer is high. It is also shown that when the deep-acceptor's energy level is deeper, the breakdown voltage becomes higher in the highk region because the buffer leakage current becomes smaller.
| Original language | English |
|---|---|
| Title of host publication | Informatics, Electronics and Microsystems - TechConnect Briefs 2017 |
| Publisher | TechConnect |
| Pages | 31-34 |
| Number of pages | 4 |
| Volume | 4 |
| ISBN (Electronic) | 9780998878218 |
| Publication status | Published - 2017 |
| Event | 11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference - Washington, United States Duration: 2017 May 14 → 2017 May 17 |
Other
| Other | 11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference |
|---|---|
| Country/Territory | United States |
| City | Washington |
| Period | 17/5/14 → 17/5/17 |
Keywords
- Breakdown voltage
- Deep acceptor
- GaN HEMT
- High-k passivation layer
- Two-dimensional analysis
ASJC Scopus subject areas
- Fuel Technology
- Surfaces, Coatings and Films
- Biotechnology
- Fluid Flow and Transfer Processes