Effects of buffer impurities and field plate on breakdown performance in small-sized AlGaN/GaN HEMTs

H. Onodera, A. Nakajima, K. Horio

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Abstracts of the 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, United Kingdom, J1.6
Publication status	Published - 2011 Jul 13

Cite this

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title = "Effects of buffer impurities and field plate on breakdown performance in small-sized AlGaN/GaN HEMTs",

author = "H. Onodera and A. Nakajima and K. Horio",

year = "2011",

month = jul,

day = "13",

language = "English",

journal = "Abstracts of the 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, United Kingdom, J1.6",

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T1 - Effects of buffer impurities and field plate on breakdown performance in small-sized AlGaN/GaN HEMTs

AU - Onodera, H.

AU - Nakajima, A.

AU - Horio, K.

PY - 2011/7/13

Y1 - 2011/7/13

M3 - Article

JO - Abstracts of the 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, United Kingdom, J1.6

JF - Abstracts of the 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, United Kingdom, J1.6

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