Effects of buffer traps on breakdown characteristics in field-plate AlGaN/GaN HEMTs

H. Onodera, A. Nakajima, K. Horio

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	71-72
Journal	Proceedings of the 5th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2011), Toba, Japan
Publication status	Published - 2011 May 23

Cite this

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title = "Effects of buffer traps on breakdown characteristics in field-plate AlGaN/GaN HEMTs",

author = "H. Onodera and A. Nakajima and K. Horio",

year = "2011",

month = may,

day = "23",

language = "English",

pages = "71--72",

journal = "Proceedings of the 5th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2011), Toba, Japan",

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TY - JOUR

T1 - Effects of buffer traps on breakdown characteristics in field-plate AlGaN/GaN HEMTs

AU - Onodera, H.

AU - Nakajima, A.

AU - Horio, K.

PY - 2011/5/23

Y1 - 2011/5/23

M3 - Article

SP - 71

EP - 72

JO - Proceedings of the 5th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2011), Toba, Japan

JF - Proceedings of the 5th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2011), Toba, Japan

ER -