Abstract
Crystallization behavior was studied for glass powders in which some portions of AlF 3 in the net composition of 60(Ba 0.7 Sr 0.3)TiO 3-25SiO 2-15AlF 3 were replaced with Ga 2O 3 or Bi 2 O 3. The replacement with Ga 2O 3 resulted in a progressive increase in crystallization temperature, which effectively assisted the viscous sintering of glass powders to produce densified BST glass-ceramics at relatively lower temperatures. For the Bi 2O 3-replaced glass powders, an increasing amount of Bi 2O 3 replacement lowered the crystallization temperature and yielded less densified glass-ceramics containing a considerable amount of glassy phase. The temperature dependence of permittivity was estimated for the Ga 2O 3- and Bi 2O 3-replaced glass-ceramics as a function of sintering conditions and the amount of replacement, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 1233-1239 |
| Number of pages | 7 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume | 19 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2008 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering