EFFECTS OF IMPURITY COMPENSATION ON I-V CHARACTERISTICS OF N-I-N STRUCTURES AND BACKGATING IN GAAS INTEGRATED CIRCUITS.

K. Horio; T. Ikoma; H. Yanai

EFFECTS OF IMPURITY COMPENSATION ON I-V CHARACTERISTICS OF N-I-N STRUCTURES AND BACKGATING IN GAAS INTEGRATED CIRCUITS.

K. Horio, T. Ikoma, H. Yanai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

It is found that an effective resistivity in the low voltage region depends on acceptor and trap densities and the length of the i-layer. To achieve good isolation between two devices in GaAs ICs, it is suggested that the shallow acceptor density as well as the trap density must be larger than a critical value. An analytical model has been presented to estimate the effective resistivity and the onset voltage of current rise. The backgating effect has also been analyzed in terms of a separation distance and an acceptor density.

Original language	English
Title of host publication	Unknown Host Publication Title
Editors	David C. Look, John S. Blakemore
Publisher	Shiva Publ Ltd, Nantwich, Engl Also
Pages	354-363
Number of pages	10
ISBN (Print)	1850140316
Publication status	Published - 1984 Dec 1

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "EFFECTS OF IMPURITY COMPENSATION ON I-V CHARACTERISTICS OF N-I-N STRUCTURES AND BACKGATING IN GAAS INTEGRATED CIRCUITS.",

abstract = "It is found that an effective resistivity in the low voltage region depends on acceptor and trap densities and the length of the i-layer. To achieve good isolation between two devices in GaAs ICs, it is suggested that the shallow acceptor density as well as the trap density must be larger than a critical value. An analytical model has been presented to estimate the effective resistivity and the onset voltage of current rise. The backgating effect has also been analyzed in terms of a separation distance and an acceptor density.",

author = "K. Horio and T. Ikoma and H. Yanai",

year = "1984",

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language = "English",

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T1 - EFFECTS OF IMPURITY COMPENSATION ON I-V CHARACTERISTICS OF N-I-N STRUCTURES AND BACKGATING IN GAAS INTEGRATED CIRCUITS.

AU - Horio, K.

AU - Ikoma, T.

AU - Yanai, H.

PY - 1984/12/1

Y1 - 1984/12/1

N2 - It is found that an effective resistivity in the low voltage region depends on acceptor and trap densities and the length of the i-layer. To achieve good isolation between two devices in GaAs ICs, it is suggested that the shallow acceptor density as well as the trap density must be larger than a critical value. An analytical model has been presented to estimate the effective resistivity and the onset voltage of current rise. The backgating effect has also been analyzed in terms of a separation distance and an acceptor density.

AB - It is found that an effective resistivity in the low voltage region depends on acceptor and trap densities and the length of the i-layer. To achieve good isolation between two devices in GaAs ICs, it is suggested that the shallow acceptor density as well as the trap density must be larger than a critical value. An analytical model has been presented to estimate the effective resistivity and the onset voltage of current rise. The backgating effect has also been analyzed in terms of a separation distance and an acceptor density.

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UR - http://www.scopus.com/inward/citedby.url?scp=0021542903&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0021542903

SN - 1850140316

SP - 354

EP - 363

BT - Unknown Host Publication Title

A2 - Look, David C.

A2 - Blakemore, John S.

PB - Shiva Publ Ltd, Nantwich, Engl Also

ER -

EFFECTS OF IMPURITY COMPENSATION ON I-V CHARACTERISTICS OF N-I-N STRUCTURES AND BACKGATING IN GAAS INTEGRATED CIRCUITS.

Abstract

ASJC Scopus subject areas

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