Effects of Interfacial Thin Metal Layer for High-Performance Pt-Au-Based Schottky Contacts to AlGaN-GaN

Naruhisa Miura; Toshiyuki Oishi; Takuma Nanjo; Muneyoshi Suita; Yuji Abe; Tatsuo Ozeki; Hiroyasu Ishikawa; Takashi Egawa

doi:10.1109/TED.2003.822472

Effects of Interfacial Thin Metal Layer for High-Performance Pt-Au-Based Schottky Contacts to AlGaN-GaN

Naruhisa Miura, Toshiyuki Oishi, Takuma Nanjo, Muneyoshi Suita, Yuji Abe, Tatsuo Ozeki, Hiroyasu Ishikawa, Takashi Egawa

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

Schottky diodes with Ni-Ti-Pt-Au Schottky electrodes on AlGaN-GaN heterostructures were fabricated and subjected to rapid thermal annealing. The electrical influence on them was investigated in terms of the existence of a thin Ni or Ti layer. The diodes of the Ni-Pt-Au system showed a drastic improvement in their electrical properties, such as an increase in the Schottky barrier height and a decrease in the leakage current, after the 600°C treatment whereas the thermal annealing effect was found to be small in the Ti-Pt-Au and the Pt-Au systems. The Ni was considered to play a significant role in realizing a clean Pt contact to AlGaN and reducing surface traps, which were revealed from Auger electron spectroscopy measurement and frequency-dependent capacitance-voltage measurement, respectively. The thermally-treated Ni-Pt-Au gate electrode was concluded to be practicable for realizing high performance HEMTs.

Original language	English
Pages (from-to)	297-303
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	51
Issue number	3
DOIs	https://doi.org/10.1109/TED.2003.822472
Publication status	Published - 2004 Mar 1
Externally published	Yes

Keywords

Leakage currents
MODFETs
Rapid thermal annealing (RTA)
Schottky barriers
Schottky diodes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2003.822472

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title = "Effects of Interfacial Thin Metal Layer for High-Performance Pt-Au-Based Schottky Contacts to AlGaN-GaN",

abstract = "Schottky diodes with Ni-Ti-Pt-Au Schottky electrodes on AlGaN-GaN heterostructures were fabricated and subjected to rapid thermal annealing. The electrical influence on them was investigated in terms of the existence of a thin Ni or Ti layer. The diodes of the Ni-Pt-Au system showed a drastic improvement in their electrical properties, such as an increase in the Schottky barrier height and a decrease in the leakage current, after the 600°C treatment whereas the thermal annealing effect was found to be small in the Ti-Pt-Au and the Pt-Au systems. The Ni was considered to play a significant role in realizing a clean Pt contact to AlGaN and reducing surface traps, which were revealed from Auger electron spectroscopy measurement and frequency-dependent capacitance-voltage measurement, respectively. The thermally-treated Ni-Pt-Au gate electrode was concluded to be practicable for realizing high performance HEMTs.",

keywords = "Leakage currents, MODFETs, Rapid thermal annealing (RTA), Schottky barriers, Schottky diodes",

author = "Naruhisa Miura and Toshiyuki Oishi and Takuma Nanjo and Muneyoshi Suita and Yuji Abe and Tatsuo Ozeki and Hiroyasu Ishikawa and Takashi Egawa",

year = "2004",

month = mar,

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doi = "10.1109/TED.2003.822472",

language = "English",

volume = "51",

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journal = "IEEE Transactions on Electron Devices",

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T1 - Effects of Interfacial Thin Metal Layer for High-Performance Pt-Au-Based Schottky Contacts to AlGaN-GaN

AU - Miura, Naruhisa

AU - Oishi, Toshiyuki

AU - Nanjo, Takuma

AU - Suita, Muneyoshi

AU - Abe, Yuji

AU - Ozeki, Tatsuo

AU - Ishikawa, Hiroyasu

AU - Egawa, Takashi

PY - 2004/3/1

Y1 - 2004/3/1

N2 - Schottky diodes with Ni-Ti-Pt-Au Schottky electrodes on AlGaN-GaN heterostructures were fabricated and subjected to rapid thermal annealing. The electrical influence on them was investigated in terms of the existence of a thin Ni or Ti layer. The diodes of the Ni-Pt-Au system showed a drastic improvement in their electrical properties, such as an increase in the Schottky barrier height and a decrease in the leakage current, after the 600°C treatment whereas the thermal annealing effect was found to be small in the Ti-Pt-Au and the Pt-Au systems. The Ni was considered to play a significant role in realizing a clean Pt contact to AlGaN and reducing surface traps, which were revealed from Auger electron spectroscopy measurement and frequency-dependent capacitance-voltage measurement, respectively. The thermally-treated Ni-Pt-Au gate electrode was concluded to be practicable for realizing high performance HEMTs.

AB - Schottky diodes with Ni-Ti-Pt-Au Schottky electrodes on AlGaN-GaN heterostructures were fabricated and subjected to rapid thermal annealing. The electrical influence on them was investigated in terms of the existence of a thin Ni or Ti layer. The diodes of the Ni-Pt-Au system showed a drastic improvement in their electrical properties, such as an increase in the Schottky barrier height and a decrease in the leakage current, after the 600°C treatment whereas the thermal annealing effect was found to be small in the Ti-Pt-Au and the Pt-Au systems. The Ni was considered to play a significant role in realizing a clean Pt contact to AlGaN and reducing surface traps, which were revealed from Auger electron spectroscopy measurement and frequency-dependent capacitance-voltage measurement, respectively. The thermally-treated Ni-Pt-Au gate electrode was concluded to be practicable for realizing high performance HEMTs.

KW - Leakage currents

KW - MODFETs

KW - Rapid thermal annealing (RTA)

KW - Schottky barriers

KW - Schottky diodes

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JO - IEEE Transactions on Electron Devices

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Effects of Interfacial Thin Metal Layer for High-Performance Pt-Au-Based Schottky Contacts to AlGaN-GaN

Abstract

Keywords

ASJC Scopus subject areas

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