Effects of junctions on conduction properties of GaAs n-i-n structures including deep levels

K. Horio; H. Yanai

doi:10.1108/eb051731

Effects of junctions on conduction properties of GaAs n-i-n structures including deep levels

K. Horio, H. Yanai

Research output: Contribution to journal › Review article › peer-review

Abstract

I-V characteristics of GaAs n-i-n structures are calculated by considering impact ionization of carriers. Impact ionization at reverse-biased n-i junction becomes a cause of steep current rise when an acceptor density in the i-layer is high. It is shown that an optimum acceptor density exists to keep a good isolation. Photoconduction transients of GaAs n-i-n structures are also simulated, and are shown to be strongly affected by existence of n-i junctions.

Original language	English
Pages (from-to)	563-572
Number of pages	10
Journal	COMPEL - The international journal for computation and mathematics in electrical and electronic engineering
Volume	10
Issue number	4
DOIs	https://doi.org/10.1108/eb051731
Publication status	Published - 1991 Apr 1

ASJC Scopus subject areas

Computer Science Applications
Computational Theory and Mathematics
Electrical and Electronic Engineering
Applied Mathematics

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10.1108/eb051731

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abstract = "I-V characteristics of GaAs n-i-n structures are calculated by considering impact ionization of carriers. Impact ionization at reverse-biased n-i junction becomes a cause of steep current rise when an acceptor density in the i-layer is high. It is shown that an optimum acceptor density exists to keep a good isolation. Photoconduction transients of GaAs n-i-n structures are also simulated, and are shown to be strongly affected by existence of n-i junctions.",

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AB - I-V characteristics of GaAs n-i-n structures are calculated by considering impact ionization of carriers. Impact ionization at reverse-biased n-i junction becomes a cause of steep current rise when an acceptor density in the i-layer is high. It is shown that an optimum acceptor density exists to keep a good isolation. Photoconduction transients of GaAs n-i-n structures are also simulated, and are shown to be strongly affected by existence of n-i junctions.

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Effects of junctions on conduction properties of GaAs n-i-n structures including deep levels

Abstract

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