Abstract
Two-dimensional simulation of GaAs MESFETs with perfectly insulating substrate is made, and the results are compared with those for a case with more realistic semi-insulating substrate into which carriers can be injected. It is shown that the kink or sub-breakdown is explained by impact ionization of holes and the following hole trapping or hole accumulation in the semi-insulating substrate rather than by direct gate breakdown.
| Original language | English |
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| Pages | 353-356 |
| Number of pages | 4 |
| Publication status | Published - 1996 Dec 1 |
| Event | Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 - Toulouse, Fr Duration: 1996 Apr 29 → 1996 May 3 |
Other
| Other | Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 |
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| City | Toulouse, Fr |
| Period | 96/4/29 → 96/5/3 |
ASJC Scopus subject areas
- Engineering(all)