Abstract
Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs are studied by two-dimensional analysis. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, it is suggested that in a case with relatively high densities of surface states, the breakdown voltage could be drastically lowered by introducing a narrowly-recessed-gate structure.
| Original language | English |
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| Pages | 284-287 |
| Number of pages | 4 |
| Publication status | Published - 2002 Dec 1 |
| Event | 2002 12th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002) - , Slovakia Duration: 2002 Jun 30 → 2002 Jul 5 |
Conference
| Conference | 2002 12th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002) |
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| Country/Territory | Slovakia |
| Period | 02/6/30 → 02/7/5 |
ASJC Scopus subject areas
- Engineering(all)