Electrical property and structural analysis of amphoteric impurity Ge doped GaSe crystal grown by liquid phase growth

Y. Sato; S. Zhao; K. Maeda; T. Tanabe; Y. Oyama

doi:10.1016/j.jcrysgro.2017.02.036

Electrical property and structural analysis of amphoteric impurity Ge doped GaSe crystal grown by liquid phase growth

Y. Sato, S. Zhao, K. Maeda, T. Tanabe, Y. Oyama

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In order to improve conversion efficiency of THz wave generation, Germanium (Ge)-doped gallium selenide (GaSe) single crystals have been grown by Temperature Difference Method under Controlled Vapor Pressure (TDM-CVP). In this article, electrical property and lattice constant of Ge doped GaSe (GaSe:Ge) crystal are compared with that of not-intentionally doped GaSe crystal. Compared with non-doped GaSe crystal, carrier concentration p was decreased by Ge-doping (not-intentionally doped GaSe p=3.2×10¹⁵ cm⁻³ at 255 K, GaSe:Ge p=4.9×10¹⁴ cm⁻³ at 255 K). In addition, it has been confirmed that lattice constant of GaSe crystal increased with doping Ge concentration increased.

Original language	English
Pages (from-to)	34-37
Number of pages	4
Journal	Journal of Crystal Growth
Volume	467
DOIs	https://doi.org/10.1016/j.jcrysgro.2017.02.036
Publication status	Published - 2017 Jun 1
Externally published	Yes

Keywords

A2. Growth from solutions
B1. Gallium compounds
B2. Nonlinear optic materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2017.02.036

Cite this

@article{e51d4ec0ddb24e53b5f7b6f59262f9d0,

title = "Electrical property and structural analysis of amphoteric impurity Ge doped GaSe crystal grown by liquid phase growth",

abstract = "In order to improve conversion efficiency of THz wave generation, Germanium (Ge)-doped gallium selenide (GaSe) single crystals have been grown by Temperature Difference Method under Controlled Vapor Pressure (TDM-CVP). In this article, electrical property and lattice constant of Ge doped GaSe (GaSe:Ge) crystal are compared with that of not-intentionally doped GaSe crystal. Compared with non-doped GaSe crystal, carrier concentration p was decreased by Ge-doping (not-intentionally doped GaSe p=3.2×1015 cm−3 at 255 K, GaSe:Ge p=4.9×1014 cm−3 at 255 K). In addition, it has been confirmed that lattice constant of GaSe crystal increased with doping Ge concentration increased.",

keywords = "A2. Growth from solutions, B1. Gallium compounds, B2. Nonlinear optic materials",

author = "Y. Sato and S. Zhao and K. Maeda and T. Tanabe and Y. Oyama",

year = "2017",

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day = "1",

doi = "10.1016/j.jcrysgro.2017.02.036",

language = "English",

volume = "467",

pages = "34--37",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Electrical property and structural analysis of amphoteric impurity Ge doped GaSe crystal grown by liquid phase growth

AU - Sato, Y.

AU - Zhao, S.

AU - Maeda, K.

AU - Tanabe, T.

AU - Oyama, Y.

PY - 2017/6/1

Y1 - 2017/6/1

N2 - In order to improve conversion efficiency of THz wave generation, Germanium (Ge)-doped gallium selenide (GaSe) single crystals have been grown by Temperature Difference Method under Controlled Vapor Pressure (TDM-CVP). In this article, electrical property and lattice constant of Ge doped GaSe (GaSe:Ge) crystal are compared with that of not-intentionally doped GaSe crystal. Compared with non-doped GaSe crystal, carrier concentration p was decreased by Ge-doping (not-intentionally doped GaSe p=3.2×1015 cm−3 at 255 K, GaSe:Ge p=4.9×1014 cm−3 at 255 K). In addition, it has been confirmed that lattice constant of GaSe crystal increased with doping Ge concentration increased.

AB - In order to improve conversion efficiency of THz wave generation, Germanium (Ge)-doped gallium selenide (GaSe) single crystals have been grown by Temperature Difference Method under Controlled Vapor Pressure (TDM-CVP). In this article, electrical property and lattice constant of Ge doped GaSe (GaSe:Ge) crystal are compared with that of not-intentionally doped GaSe crystal. Compared with non-doped GaSe crystal, carrier concentration p was decreased by Ge-doping (not-intentionally doped GaSe p=3.2×1015 cm−3 at 255 K, GaSe:Ge p=4.9×1014 cm−3 at 255 K). In addition, it has been confirmed that lattice constant of GaSe crystal increased with doping Ge concentration increased.

KW - A2. Growth from solutions

KW - B1. Gallium compounds

KW - B2. Nonlinear optic materials

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DO - 10.1016/j.jcrysgro.2017.02.036

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SN - 0022-0248

VL - 467

SP - 34

EP - 37

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Electrical property and structural analysis of amphoteric impurity Ge doped GaSe crystal grown by liquid phase growth

Abstract

Keywords

ASJC Scopus subject areas

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