Energy transport simulation for graded HBT's: importance of setting adequate values for transport parameters

Kazushige Horio; Tadayuki Okada; Akio Nakatani

doi:10.1109/16.753695

Energy transport simulation for graded HBT's: importance of setting adequate values for transport parameters

Kazushige Horio, Tadayuki Okada, Akio Nakatani

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

An energy transport simulation method for graded AlGaAs/GaAs heterojunction bipolar transistors (HBT's) is presented in which Al composition-, doping density-, and energy-dependences of transport parameters are considered. For several representative Al composition and doping densities, parameters such as electron mobility, energy relaxation time, and upper-valley fraction are evaluated as a function of electron energy by a Monte Carlo method. For the other Al composition, these are determined by a linear interpolation method. Calculated cutoff frequency characteristics and electron velocity profiles are compared with those obtained by using more simplified approaches, demonstrating the importance of giving adequate transport parameters, particularly in analyzing graded band-gap base HBT's.

Original language	English
Pages (from-to)	641-647
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	46
Issue number	4
DOIs	https://doi.org/10.1109/16.753695
Publication status	Published - 1999 Jan 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.753695

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@article{1ac5edcb80d24dcd8ff34bda452fb5ef,

title = "Energy transport simulation for graded HBT's: importance of setting adequate values for transport parameters",

abstract = "An energy transport simulation method for graded AlGaAs/GaAs heterojunction bipolar transistors (HBT's) is presented in which Al composition-, doping density-, and energy-dependences of transport parameters are considered. For several representative Al composition and doping densities, parameters such as electron mobility, energy relaxation time, and upper-valley fraction are evaluated as a function of electron energy by a Monte Carlo method. For the other Al composition, these are determined by a linear interpolation method. Calculated cutoff frequency characteristics and electron velocity profiles are compared with those obtained by using more simplified approaches, demonstrating the importance of giving adequate transport parameters, particularly in analyzing graded band-gap base HBT's.",

author = "Kazushige Horio and Tadayuki Okada and Akio Nakatani",

year = "1999",

month = jan,

day = "1",

doi = "10.1109/16.753695",

language = "English",

volume = "46",

pages = "641--647",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Energy transport simulation for graded HBT's

T2 - importance of setting adequate values for transport parameters

AU - Horio, Kazushige

AU - Okada, Tadayuki

AU - Nakatani, Akio

PY - 1999/1/1

Y1 - 1999/1/1

N2 - An energy transport simulation method for graded AlGaAs/GaAs heterojunction bipolar transistors (HBT's) is presented in which Al composition-, doping density-, and energy-dependences of transport parameters are considered. For several representative Al composition and doping densities, parameters such as electron mobility, energy relaxation time, and upper-valley fraction are evaluated as a function of electron energy by a Monte Carlo method. For the other Al composition, these are determined by a linear interpolation method. Calculated cutoff frequency characteristics and electron velocity profiles are compared with those obtained by using more simplified approaches, demonstrating the importance of giving adequate transport parameters, particularly in analyzing graded band-gap base HBT's.

AB - An energy transport simulation method for graded AlGaAs/GaAs heterojunction bipolar transistors (HBT's) is presented in which Al composition-, doping density-, and energy-dependences of transport parameters are considered. For several representative Al composition and doping densities, parameters such as electron mobility, energy relaxation time, and upper-valley fraction are evaluated as a function of electron energy by a Monte Carlo method. For the other Al composition, these are determined by a linear interpolation method. Calculated cutoff frequency characteristics and electron velocity profiles are compared with those obtained by using more simplified approaches, demonstrating the importance of giving adequate transport parameters, particularly in analyzing graded band-gap base HBT's.

UR - http://www.scopus.com/inward/record.url?scp=0032650123&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032650123&partnerID=8YFLogxK

U2 - 10.1109/16.753695

DO - 10.1109/16.753695

M3 - Article

AN - SCOPUS:0032650123

SN - 0018-9383

VL - 46

SP - 641

EP - 647

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

ER -

Energy transport simulation for graded HBT's: importance of setting adequate values for transport parameters

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