Epitaxial Al Schottky contacts formed on (111) GaAs

Kazuyoshi Ueno; Takayoshi Yoshida; Kazuyuki Hirose

doi:10.1063/1.102967

Epitaxial Al Schottky contacts formed on (111) GaAs

Kazuyoshi Ueno, Takayoshi Yoshida, Kazuyuki Hirose

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Epitaxial (111)A1/(111)GaAs Schottky contacts are formed using molecular beam epitaxy. The epitaxial relationship is determined by transmission electron microscopy. The interface is found to be abrupt and of an atomic order. Schottky barrier heights are measured by current-voltage and capacitance-voltage methods. The Schottky barrier height for a (111) surface is found to be stable under 450 °C annealing in a N₂ atmosphere.

Original language	English
Pages (from-to)	2204-2206
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	22
DOIs	https://doi.org/10.1063/1.102967
Publication status	Published - 1990
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.102967

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@article{939bc611530b4aef8fee74192e6f7c3f,

title = "Epitaxial Al Schottky contacts formed on (111) GaAs",

abstract = "Epitaxial (111)A1/(111)GaAs Schottky contacts are formed using molecular beam epitaxy. The epitaxial relationship is determined by transmission electron microscopy. The interface is found to be abrupt and of an atomic order. Schottky barrier heights are measured by current-voltage and capacitance-voltage methods. The Schottky barrier height for a (111) surface is found to be stable under 450 °C annealing in a N2 atmosphere.",

author = "Kazuyoshi Ueno and Takayoshi Yoshida and Kazuyuki Hirose",

year = "1990",

doi = "10.1063/1.102967",

language = "English",

volume = "56",

pages = "2204--2206",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "22",

}

TY - JOUR

T1 - Epitaxial Al Schottky contacts formed on (111) GaAs

AU - Ueno, Kazuyoshi

AU - Yoshida, Takayoshi

AU - Hirose, Kazuyuki

PY - 1990

Y1 - 1990

N2 - Epitaxial (111)A1/(111)GaAs Schottky contacts are formed using molecular beam epitaxy. The epitaxial relationship is determined by transmission electron microscopy. The interface is found to be abrupt and of an atomic order. Schottky barrier heights are measured by current-voltage and capacitance-voltage methods. The Schottky barrier height for a (111) surface is found to be stable under 450 °C annealing in a N2 atmosphere.

AB - Epitaxial (111)A1/(111)GaAs Schottky contacts are formed using molecular beam epitaxy. The epitaxial relationship is determined by transmission electron microscopy. The interface is found to be abrupt and of an atomic order. Schottky barrier heights are measured by current-voltage and capacitance-voltage methods. The Schottky barrier height for a (111) surface is found to be stable under 450 °C annealing in a N2 atmosphere.

UR - http://www.scopus.com/inward/record.url?scp=36549094216&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549094216&partnerID=8YFLogxK

U2 - 10.1063/1.102967

DO - 10.1063/1.102967

M3 - Article

AN - SCOPUS:36549094216

SN - 0003-6951

VL - 56

SP - 2204

EP - 2206

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Epitaxial Al Schottky contacts formed on (111) GaAs

Abstract

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