TY - JOUR
T1 - Epitaxial growth of metallic buffer layer structure and c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 thin film on Si for high performance piezoelectric micromachined ultrasonic transducer
AU - Thao, Pham Ngoc
AU - Yoshida, Shinya
AU - Tanaka, Shuji
N1 - Funding Information:
This work was partly supported by JSPS KAKENHI-Grant Number 16K17500 and the Asahi Glass Foundation. This work was also supported by the “Nanotechnology Platform” of the Ministry of Education, Culture, Sports, Science and Technology, Japan (MEXT), at the Center for Integrated Nanotechnology Support, Tohoku University.
Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017/12
Y1 - 2017/12
N2 - This paper reports on the development of a metallic buffer layer structure, (100) SrRuO3 (SRO)/(100) Pt/(100) Ir/(100) yttria-stabilized zirconia (YSZ) layers for the epitaxial growth of a c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 (PMnN-PZT) thin film on a (100) Si wafer for piezoelectric micro-electro mechanical systems (MEMS) application. The stacking layers were epitaxially grown on a Si substrate under the optimal deposition condition. A crack-free PMnN-PZT epitaxial thin films was obtained at a thickness up to at least 1.7m, which is enough for MEMS applications. The unimorph MEMS cantilevers based on the PMnN-PZT thin film were fabricated and characterized. As a result, the PMnN-PZT thin film exhibited -10 to -12 C/m2 as a piezoelectric coefficient e 31,f and ∼250 as a dielectric constants ϵr. The resultant FOM for piezoelectric micromachined ultrasonic transducer (pMUT) is higher than those of general PZT and AlN thin films. This structure has a potential to provide high-performance pMUTs.
AB - This paper reports on the development of a metallic buffer layer structure, (100) SrRuO3 (SRO)/(100) Pt/(100) Ir/(100) yttria-stabilized zirconia (YSZ) layers for the epitaxial growth of a c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 (PMnN-PZT) thin film on a (100) Si wafer for piezoelectric micro-electro mechanical systems (MEMS) application. The stacking layers were epitaxially grown on a Si substrate under the optimal deposition condition. A crack-free PMnN-PZT epitaxial thin films was obtained at a thickness up to at least 1.7m, which is enough for MEMS applications. The unimorph MEMS cantilevers based on the PMnN-PZT thin film were fabricated and characterized. As a result, the PMnN-PZT thin film exhibited -10 to -12 C/m2 as a piezoelectric coefficient e 31,f and ∼250 as a dielectric constants ϵr. The resultant FOM for piezoelectric micromachined ultrasonic transducer (pMUT) is higher than those of general PZT and AlN thin films. This structure has a potential to provide high-performance pMUTs.
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U2 - 10.7567/JJAP.56.127201
DO - 10.7567/JJAP.56.127201
M3 - Article
AN - SCOPUS:85039148266
SN - 0021-4922
VL - 56
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 12
M1 - 127201
ER -