Abstract
The fabrication of ultracompact three dimensional monolithic microwave circuits (MMIC) having a sophisticated three-dimensional (3D) interconnection structure was discussed. The circuits were manufactured using the inductively coupled plasma etching with a double-layer mask, consisting of WSi covered with photoresists containing silicon. The developed method enabled the formation of holes to any levels of interconnections simultaneously. It resulted in smaller chip area, higher performance and greater design flexibility in MMICs.
Original language | English |
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Pages (from-to) | 1019-1025 |
Number of pages | 7 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 20 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2002 May 1 |
Event | 20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States Duration: 2001 Oct 1 → 2001 Oct 3 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering