Evaluation of microscopic structural randomness in SiO2 by analysis of photoluminescence decay profiles

Keisuke Ishii; Kwang Soo Seol; Yoshimichi Ohki; Hiroyuki Nishikawa

doi:10.1002/(sici)1520-6416(199705)119:3<1::aid-eej1>3.0.co;2-d

Evaluation of microscopic structural randomness in SiO₂ by analysis of photoluminescence decay profiles

Keisuke Ishii, Kwang Soo Seol, Yoshimichi Ohki, Hiroyuki Nishikawa

Research output: Contribution to journal › Article › peer-review

Abstract

Microscopic structural randomness in SiO₂, a typical electrical insulating material, was evaluated by observing the decay profile of the photoluminescence due to oxygen vacancies (≡Si-Si≡). As samples with different degrees of randomness, an ion-implanted thermal SiO₂ film, SiO₂ films formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane with and without doped fluorine, a buried oxide film prepared by SIMOX (separation by ion-implanted oxygen), and a bulk silica glass prepared by the soot-remelting method were tested. By analyzing the decay profile with a stretched exponential function, it was found that the deviation of the decay profile from a single exponential function is larger in the samples whose infrared absorption properties and HF etch rate suggest greater structural randomness.

Original language	English
Pages (from-to)	1-6
Number of pages	6
Journal	Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)
Volume	119
Issue number	3
DOIs	https://doi.org/10.1002/(sici)1520-6416(199705)119:3<1::aid-eej1>3.0.co;2-d
Publication status	Published - 1997
Externally published	Yes

Keywords

Decay profile
Oxygen vacancy
Photoluminescence
Stretched exponential function
Structural randomness

ASJC Scopus subject areas

Energy Engineering and Power Technology
Electrical and Electronic Engineering

Access to Document

10.1002/(sici)1520-6416(199705)119:3<1::aid-eej1>3.0.co;2-d

Cite this

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title = "Evaluation of microscopic structural randomness in SiO2 by analysis of photoluminescence decay profiles",

abstract = "Microscopic structural randomness in SiO2, a typical electrical insulating material, was evaluated by observing the decay profile of the photoluminescence due to oxygen vacancies (≡Si-Si≡). As samples with different degrees of randomness, an ion-implanted thermal SiO2 film, SiO2 films formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane with and without doped fluorine, a buried oxide film prepared by SIMOX (separation by ion-implanted oxygen), and a bulk silica glass prepared by the soot-remelting method were tested. By analyzing the decay profile with a stretched exponential function, it was found that the deviation of the decay profile from a single exponential function is larger in the samples whose infrared absorption properties and HF etch rate suggest greater structural randomness.",

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author = "Keisuke Ishii and Seol, {Kwang Soo} and Yoshimichi Ohki and Hiroyuki Nishikawa",

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AU - Seol, Kwang Soo

AU - Ohki, Yoshimichi

AU - Nishikawa, Hiroyuki

PY - 1997

Y1 - 1997

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AB - Microscopic structural randomness in SiO2, a typical electrical insulating material, was evaluated by observing the decay profile of the photoluminescence due to oxygen vacancies (≡Si-Si≡). As samples with different degrees of randomness, an ion-implanted thermal SiO2 film, SiO2 films formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane with and without doped fluorine, a buried oxide film prepared by SIMOX (separation by ion-implanted oxygen), and a bulk silica glass prepared by the soot-remelting method were tested. By analyzing the decay profile with a stretched exponential function, it was found that the deviation of the decay profile from a single exponential function is larger in the samples whose infrared absorption properties and HF etch rate suggest greater structural randomness.

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