Evolution of Leakage Paths in HfO2/SiO2 Stacked Gate Dielectrics: A Stable Direct Observation by Ultrahigh Vacuum Conducting Atomic Force Microscopy

K.Kyuno K.Kyuno; K.Kita K.Kita; A.Toriumi A.Toriumi; Kentaro Kyuno

Evolution of Leakage Paths in HfO2/SiO2 Stacked Gate Dielectrics: A Stable Direct Observation by Ultrahigh Vacuum Conducting Atomic Force Microscopy

K.Kyuno K.Kyuno, K.Kita K.Kita, A.Toriumi A.Toriumi, Kentaro Kyuno

Functional Control Systems

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Applied Physics Letters
Publication status	Published - 2005 Apr 1

Cite this

@article{184faedd7f354cf3a15ac440357919cd,

title = "Evolution of Leakage Paths in HfO2/SiO2 Stacked Gate Dielectrics: A Stable Direct Observation by Ultrahigh Vacuum Conducting Atomic Force Microscopy",

author = "K.Kyuno K.Kyuno and K.Kita K.Kita and A.Toriumi A.Toriumi and Kentaro Kyuno",

year = "2005",

month = apr,

day = "1",

language = "English",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Evolution of Leakage Paths in HfO2/SiO2 Stacked Gate Dielectrics: A Stable Direct Observation by Ultrahigh Vacuum Conducting Atomic Force Microscopy

AU - K.Kyuno, K.Kyuno

AU - K.Kita, K.Kita

AU - A.Toriumi, A.Toriumi

AU - Kyuno, Kentaro

PY - 2005/4/1

Y1 - 2005/4/1

M3 - Article

SN - 0003-6951

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -