Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate

S. Arulkumaran, T. Egawa, G. Zhao, H. Ishikawa, M. Umeno

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)


The epitaxial layers of semiconducting gallium compounds were grown by atmospheric pressure metallorganic chemical vapor deposition (MOCVD). Semiconducting gallium compounds were used to fabricate high electron mobility transistor (HEMT) on semi-insulating silicon carbide substrates. A maximum current density of 867 mA/mm and transconductance of 287 mS/mm was observed for the gate voltage of 0.2 volts.

Original languageEnglish
Number of pages2
Publication statusPublished - 2001
Externally publishedYes
EventDevice Research Conference (DRC) - Notre Dame, IN, United States
Duration: 2001 Jun 252001 Jun 27


ConferenceDevice Research Conference (DRC)
Country/TerritoryUnited States
CityNotre Dame, IN

ASJC Scopus subject areas

  • General Engineering


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