Extension of high fT operation bias range for an AlInAs/InGaAs HBT

S. Tanaka; A. Furukawa; T. Baba; M. Madihian; M. Mizuta; K. Honjo

Extension of high f_T operation bias range for an AlInAs/InGaAs HBT

S. Tanaka, A. Furukawa, T. Baba, M. Madihian, M. Mizuta, K. Honjo

Research output: Contribution to conference › Paper › peer-review

Abstract

The authors report on the fabrication and characteristics of AlInAs/InGaAs HBTs (heterojunction bipolar transistors) with a base-collector structure that results in high-f_T operation over a wide range of collector bias voltage variation. This feature results in high-speed switching performance for digital circuits, where the device operating bias point varies widely due to logic swing. The fabricated device exhibited an f_T-V_CE characteristic with a broad peak at around 2.2 V (V_BE = 1.0 V). It was found that the electron transit time t_B + t_C is insensitive to external voltages. A realistic flat f_T-V_CE characteristic can be obtained by reducing extrinsic delay time.

Original language	English
Pages	175-184
Number of pages	10
Publication status	Published - 1989 Dec 1
Event	Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA Duration: 1989 Aug 7 → 1989 Aug 9

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Other	Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
City	Ithaca, NY, USA
Period	89/8/7 → 89/8/9

ASJC Scopus subject areas

Engineering(all)

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title = "Extension of high fT operation bias range for an AlInAs/InGaAs HBT",

abstract = "The authors report on the fabrication and characteristics of AlInAs/InGaAs HBTs (heterojunction bipolar transistors) with a base-collector structure that results in high-fT operation over a wide range of collector bias voltage variation. This feature results in high-speed switching performance for digital circuits, where the device operating bias point varies widely due to logic swing. The fabricated device exhibited an fT-VCE characteristic with a broad peak at around 2.2 V (VBE = 1.0 V). It was found that the electron transit time tB + tC is insensitive to external voltages. A realistic flat fT-VCE characteristic can be obtained by reducing extrinsic delay time.",

author = "S. Tanaka and A. Furukawa and T. Baba and M. Madihian and M. Mizuta and K. Honjo",

year = "1989",

month = dec,

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pages = "175--184",

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T1 - Extension of high fT operation bias range for an AlInAs/InGaAs HBT

AU - Tanaka, S.

AU - Furukawa, A.

AU - Baba, T.

AU - Madihian, M.

AU - Mizuta, M.

AU - Honjo, K.

PY - 1989/12/1

Y1 - 1989/12/1

N2 - The authors report on the fabrication and characteristics of AlInAs/InGaAs HBTs (heterojunction bipolar transistors) with a base-collector structure that results in high-fT operation over a wide range of collector bias voltage variation. This feature results in high-speed switching performance for digital circuits, where the device operating bias point varies widely due to logic swing. The fabricated device exhibited an fT-VCE characteristic with a broad peak at around 2.2 V (VBE = 1.0 V). It was found that the electron transit time tB + tC is insensitive to external voltages. A realistic flat fT-VCE characteristic can be obtained by reducing extrinsic delay time.

AB - The authors report on the fabrication and characteristics of AlInAs/InGaAs HBTs (heterojunction bipolar transistors) with a base-collector structure that results in high-fT operation over a wide range of collector bias voltage variation. This feature results in high-speed switching performance for digital circuits, where the device operating bias point varies widely due to logic swing. The fabricated device exhibited an fT-VCE characteristic with a broad peak at around 2.2 V (VBE = 1.0 V). It was found that the electron transit time tB + tC is insensitive to external voltages. A realistic flat fT-VCE characteristic can be obtained by reducing extrinsic delay time.

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T2 - Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Y2 - 7 August 1989 through 9 August 1989

ER -

Extension of high f_T operation bias range for an AlInAs/InGaAs HBT

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