Extremely high water-production created by a nanoink-stained PVA evaporator with embossment structure

Ziyang Deng, Lei Miao, Peng Fei Liu, Jianhua Zhou, Pengfei Wang, Yufei Gu, Xiaoyang Wang, Huanfu Cai, Lixian Sun, Sakae Tanemura

Research output: Contribution to journalArticlepeer-review

82 Citations (Scopus)


Over the past five years, interfacial solar water evaporation for a 2D photothermal convertor has been investigated intensively, and an evaporation rate close to the theoretical upper limit has been reached. To reduce land and optical component costs and increase the evaporation rate within an identical projection area, a nanoink-stained PVA evaporator with embossment structure is proposed to accelerate solar water evaporation via the large evaporation area in its stereostructure for practical applications. A nanoink-stained PVA sponge of 2 × 2 × 1 cm in our mimetic tree system with a three-layer embossment configuration has an extremely high evaporation rate of 2.15 kg m−2 h−1 under 1-sun illumination. In addition, our nanoink-stained PVA sponge also exhibits the outstanding ability to treat mixed organic dyes and domestic sewage. Based on our results, the nanoink-stained PVA sponge with embossment structure provides a portable solution for practical application in water purification in developing or remote regions.

Original languageEnglish
Pages (from-to)368-376
Number of pages9
JournalNano Energy
Publication statusPublished - 2019 Jan
Externally publishedYes


  • Domestic sewage treatment
  • Embossment structure
  • Mixed organic dyes treatment
  • Mixture of inorganic and organic soluble contaminants
  • Nanoink-stained PVA evaporator
  • Solar water evaporation

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • General Materials Science
  • Electrical and Electronic Engineering


Dive into the research topics of 'Extremely high water-production created by a nanoink-stained PVA evaporator with embossment structure'. Together they form a unique fingerprint.

Cite this