Fabrication of BIT films by alcohol-related ink and its properties

Masaki Yamaguchi; Tomohiro Oba; Yoichiro Masuda

doi:10.1080/00150190902873345

Fabrication of BIT films by alcohol-related ink and its properties

Masaki Yamaguchi, Tomohiro Oba, Yoichiro Masuda

Research output: Contribution to journal › Conference article › peer-review

Abstract

Bismuth titanate (Bi4Ti3O12: BIT) thin film was prepared on Pt coated Si substrate by using by an alcoholic related material. The films show single perovskite phase and predominantly c-axis orientation, not independently on crystallized pressures. The diffraction peak intensity was remarkably increased, and the full width at half maximum (FWHM) value of the diffraction lines were decreased by increasing crystallized pressures. Moreover, insulation and ferroelectric properties were improved. The remanent polarization and the coercive field values were approximately 1.9 μ C/cm2 and 23kV/cm, respectively.

Original language	English
Pages (from-to)	106-112
Number of pages	7
Journal	Ferroelectrics
Volume	380
Issue number	1 PART 1
DOIs	https://doi.org/10.1080/00150190902873345
Publication status	Published - 2009
Event	6th Asian Meeting on Ferroelectrics, AMF-6 - Taipei, Taiwan, Province of China Duration: 2008 Aug 2 → 2008 Aug 6

Keywords

Alcoholic solution
Bismuth titanate
Ferroelectricity
Oxidation atmosphere
Thin film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1080/00150190902873345

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title = "Fabrication of BIT films by alcohol-related ink and its properties",

abstract = "Bismuth titanate (Bi4Ti3O12: BIT) thin film was prepared on Pt coated Si substrate by using by an alcoholic related material. The films show single perovskite phase and predominantly c-axis orientation, not independently on crystallized pressures. The diffraction peak intensity was remarkably increased, and the full width at half maximum (FWHM) value of the diffraction lines were decreased by increasing crystallized pressures. Moreover, insulation and ferroelectric properties were improved. The remanent polarization and the coercive field values were approximately 1.9 μ C/cm2 and 23kV/cm, respectively.",

keywords = "Alcoholic solution, Bismuth titanate, Ferroelectricity, Oxidation atmosphere, Thin film",

author = "Masaki Yamaguchi and Tomohiro Oba and Yoichiro Masuda",

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language = "English",

volume = "380",

pages = "106--112",

journal = "Ferroelectrics",

issn = "0015-0193",

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note = "6th Asian Meeting on Ferroelectrics, AMF-6 ; Conference date: 02-08-2008 Through 06-08-2008",

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TY - JOUR

T1 - Fabrication of BIT films by alcohol-related ink and its properties

AU - Yamaguchi, Masaki

AU - Oba, Tomohiro

AU - Masuda, Yoichiro

PY - 2009

Y1 - 2009

N2 - Bismuth titanate (Bi4Ti3O12: BIT) thin film was prepared on Pt coated Si substrate by using by an alcoholic related material. The films show single perovskite phase and predominantly c-axis orientation, not independently on crystallized pressures. The diffraction peak intensity was remarkably increased, and the full width at half maximum (FWHM) value of the diffraction lines were decreased by increasing crystallized pressures. Moreover, insulation and ferroelectric properties were improved. The remanent polarization and the coercive field values were approximately 1.9 μ C/cm2 and 23kV/cm, respectively.

AB - Bismuth titanate (Bi4Ti3O12: BIT) thin film was prepared on Pt coated Si substrate by using by an alcoholic related material. The films show single perovskite phase and predominantly c-axis orientation, not independently on crystallized pressures. The diffraction peak intensity was remarkably increased, and the full width at half maximum (FWHM) value of the diffraction lines were decreased by increasing crystallized pressures. Moreover, insulation and ferroelectric properties were improved. The remanent polarization and the coercive field values were approximately 1.9 μ C/cm2 and 23kV/cm, respectively.

KW - Alcoholic solution

KW - Bismuth titanate

KW - Ferroelectricity

KW - Oxidation atmosphere

KW - Thin film

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U2 - 10.1080/00150190902873345

DO - 10.1080/00150190902873345

M3 - Conference article

AN - SCOPUS:77749344660

SN - 0015-0193

VL - 380

SP - 106

EP - 112

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1 PART 1

T2 - 6th Asian Meeting on Ferroelectrics, AMF-6

Y2 - 2 August 2008 through 6 August 2008

ER -

Fabrication of BIT films by alcohol-related ink and its properties

Abstract

Keywords

ASJC Scopus subject areas

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