Fabrication of Electroless CoWP/NiB Barrier Layer on SiO2 for ULSI Devices

T. Osaka, H. Aramak, M. Yoshino, K. Ueno, I. Matsuda, Y. Shacham-Diam

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	H707-H710
Journal	Journal of the Electrochemical Society
Volume	156
Publication status	Published - 2009 Sept 1

Cite this

@article{100c13759a24482490ff2e4dde4ec681,

title = "Fabrication of Electroless CoWP/NiB Barrier Layer on SiO2 for ULSI Devices",

author = "T. Osaka and H. Aramak and M. Yoshino and K. Ueno and I. Matsuda and Y. Shacham-Diam",

year = "2009",

month = sep,

day = "1",

language = "English",

volume = "156",

pages = "H707--H710",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

}