Fabrication of electroless NiRe barrier layer on SiO2 without sputtered seed layer

T.Osaka T.Osaka, N.Takano N.Takano, T.Kurokawa T.Kurokawa, K.Ueno K.Ueno, Kazuyoshi Ueno

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	7-10
Journal	Electrochemical and Solid State Letters
Volume	5(1)
Publication status	Published - 2002 Jan 1

Cite this

@article{ea0ff305dc044a69b81d438b3d7c9783,

title = "Fabrication of electroless NiRe barrier layer on SiO2 without sputtered seed layer",

author = "T.Osaka T.Osaka and N.Takano N.Takano and T.Kurokawa T.Kurokawa and K.Ueno K.Ueno and Kazuyoshi Ueno",

year = "2002",

month = jan,

day = "1",

language = "English",

volume = "5(1)",

pages = "7--10",

journal = "Electrochemical and Solid State Letters",

}

TY - JOUR

T1 - Fabrication of electroless NiRe barrier layer on SiO2 without sputtered seed layer

AU - T.Osaka, T.Osaka

AU - N.Takano, N.Takano

AU - T.Kurokawa, T.Kurokawa

AU - K.Ueno, K.Ueno

AU - Ueno, Kazuyoshi

PY - 2002/1/1

Y1 - 2002/1/1

M3 - Article

VL - 5(1)

SP - 7

EP - 10

JO - Electrochemical and Solid State Letters

JF - Electrochemical and Solid State Letters

ER -