Abstract
Heteroepitaxial GaN film was deposited on sapphire by metalorganic chemical vapor deposition. An end mirror for the GaN-based blue-green laser diode was prepared using focused ion beam (FIB) etching. The tilt angle normal to the GaN layer was shown to be less than 1° by scanning ion microscopy. The root mean square surface roughness was 11 Å as observed by atomic force microscopy. The data indicates that FIB is a powerful technique for the fabrication of GaN-based blue-green laser diodes.
| Original language | English |
|---|---|
| Pages (from-to) | 7710-7711 |
| Number of pages | 2 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 36 |
| Issue number | 12 SUPPL. B |
| Publication status | Published - 1997 Dec |
| Externally published | Yes |
Keywords
- Atomic force microscopy
- End mirror
- Focused ion beam etching
- GaN-based blue-green laser diode
- Metalorganic chemical vapor deposition
- Reactive ion etching
- Root mean square surface roughness
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)