Fabrication of high-aspect-ratio pillars by proton beam writing and application to DEP-devices

Y. Furuta; N. Uchiya; H. Nishikawa; J. Haga; M. Oikawa; T. Satoh; Y. Ishii; T. Kamiya; R. Nakao; S. Uchida

doi:10.1109/IMNC.2007.4456243

Fabrication of high-aspect-ratio pillars by proton beam writing and application to DEP-devices

Y. Furuta, N. Uchiya, H. Nishikawa, J. Haga, M. Oikawa, T. Satoh, Y. Ishii, T. Kamiya, R. Nakao, S. Uchida

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

Figures 1 (a), (b) and (c) show SEM images of 21 μm thick SU-8 pillars on silicon developed after PBW. These data demonstrate a capability of PBW to fabricate vertical pillars with a height of 21.0 μm and a width of as small as 1.1 μm with a high aspect ratio of 20, with a uniformity over 700 μm squared area. An optical microscope image in Figure 2 shows a part of a DEP device, where the high-aspect-ratio SU-8 pillars with a 12 μm pitch were formed in the gap between the two surface electrodes. Our preliminary investigation shows that Escherichia coli can be trapped at pillar structures under AC bias (3 volts, 100 kHz) of the two electrodes. The trapping behavior of DEP device with different structures and sizes will be examined.

Original language	English
Title of host publication	Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC
Pages	340-341
Number of pages	2
DOIs	https://doi.org/10.1109/IMNC.2007.4456243
Publication status	Published - 2007
Event	s20th International Microprocesses and Nanotechnology Conference, MNC 2007 - Kyoto, Japan Duration: 2007 Nov 5 → 2007 Nov 8

Publication series

Name	Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC

Conference

Conference	s20th International Microprocesses and Nanotechnology Conference, MNC 2007
Country/Territory	Japan
City	Kyoto
Period	07/11/5 → 07/11/8

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/IMNC.2007.4456243

Cite this

Furuta, Y., Uchiya, N., Nishikawa, H., Haga, J., Oikawa, M., Satoh, T., Ishii, Y., Kamiya, T., Nakao, R., & Uchida, S. (2007). Fabrication of high-aspect-ratio pillars by proton beam writing and application to DEP-devices. In Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC (pp. 340-341). [4456243] (Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC). https://doi.org/10.1109/IMNC.2007.4456243

Fabrication of high-aspect-ratio pillars by proton beam writing and application to DEP-devices. / Furuta, Y.; Uchiya, N.; Nishikawa, H. et al.
Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC. 2007. p. 340-341 4456243 (Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Furuta, Y, Uchiya, N, Nishikawa, H, Haga, J, Oikawa, M, Satoh, T, Ishii, Y, Kamiya, T, Nakao, R & Uchida, S 2007, Fabrication of high-aspect-ratio pillars by proton beam writing and application to DEP-devices. in Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC., 4456243, Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC, pp. 340-341, s20th International Microprocesses and Nanotechnology Conference, MNC 2007, Kyoto, Japan, 07/11/5. https://doi.org/10.1109/IMNC.2007.4456243

Furuta Y, Uchiya N, Nishikawa H, Haga J, Oikawa M, Satoh T et al. Fabrication of high-aspect-ratio pillars by proton beam writing and application to DEP-devices. In Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC. 2007. p. 340-341. 4456243. (Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC). doi: 10.1109/IMNC.2007.4456243

Furuta, Y. ; Uchiya, N. ; Nishikawa, H. et al. / Fabrication of high-aspect-ratio pillars by proton beam writing and application to DEP-devices. Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC. 2007. pp. 340-341 (Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC).

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title = "Fabrication of high-aspect-ratio pillars by proton beam writing and application to DEP-devices",

abstract = "Figures 1 (a), (b) and (c) show SEM images of 21 μm thick SU-8 pillars on silicon developed after PBW. These data demonstrate a capability of PBW to fabricate vertical pillars with a height of 21.0 μm and a width of as small as 1.1 μm with a high aspect ratio of 20, with a uniformity over 700 μm squared area. An optical microscope image in Figure 2 shows a part of a DEP device, where the high-aspect-ratio SU-8 pillars with a 12 μm pitch were formed in the gap between the two surface electrodes. Our preliminary investigation shows that Escherichia coli can be trapped at pillar structures under AC bias (3 volts, 100 kHz) of the two electrodes. The trapping behavior of DEP device with different structures and sizes will be examined.",

author = "Y. Furuta and N. Uchiya and H. Nishikawa and J. Haga and M. Oikawa and T. Satoh and Y. Ishii and T. Kamiya and R. Nakao and S. Uchida",

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note = "s20th International Microprocesses and Nanotechnology Conference, MNC 2007 ; Conference date: 05-11-2007 Through 08-11-2007",

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T1 - Fabrication of high-aspect-ratio pillars by proton beam writing and application to DEP-devices

AU - Furuta, Y.

AU - Uchiya, N.

AU - Nishikawa, H.

AU - Haga, J.

AU - Oikawa, M.

AU - Satoh, T.

AU - Ishii, Y.

AU - Kamiya, T.

AU - Nakao, R.

AU - Uchida, S.

PY - 2007

Y1 - 2007

N2 - Figures 1 (a), (b) and (c) show SEM images of 21 μm thick SU-8 pillars on silicon developed after PBW. These data demonstrate a capability of PBW to fabricate vertical pillars with a height of 21.0 μm and a width of as small as 1.1 μm with a high aspect ratio of 20, with a uniformity over 700 μm squared area. An optical microscope image in Figure 2 shows a part of a DEP device, where the high-aspect-ratio SU-8 pillars with a 12 μm pitch were formed in the gap between the two surface electrodes. Our preliminary investigation shows that Escherichia coli can be trapped at pillar structures under AC bias (3 volts, 100 kHz) of the two electrodes. The trapping behavior of DEP device with different structures and sizes will be examined.

AB - Figures 1 (a), (b) and (c) show SEM images of 21 μm thick SU-8 pillars on silicon developed after PBW. These data demonstrate a capability of PBW to fabricate vertical pillars with a height of 21.0 μm and a width of as small as 1.1 μm with a high aspect ratio of 20, with a uniformity over 700 μm squared area. An optical microscope image in Figure 2 shows a part of a DEP device, where the high-aspect-ratio SU-8 pillars with a 12 μm pitch were formed in the gap between the two surface electrodes. Our preliminary investigation shows that Escherichia coli can be trapped at pillar structures under AC bias (3 volts, 100 kHz) of the two electrodes. The trapping behavior of DEP device with different structures and sizes will be examined.

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BT - Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC

T2 - s20th International Microprocesses and Nanotechnology Conference, MNC 2007

Y2 - 5 November 2007 through 8 November 2007

ER -

Fabrication of high-aspect-ratio pillars by proton beam writing and application to DEP-devices

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