Fabrication of Highly Doped MLG Patterns Using Selective CVD and MoCl5Intercalation

Ekkaphop Ketsombun; Tomoki Akimoto; Kazuyoshi Ueno

doi:10.1109/IITC51362.2021.9537349

Fabrication of Highly Doped MLG Patterns Using Selective CVD and MoCl₅Intercalation

Ekkaphop Ketsombun, Tomoki Akimoto, Kazuyoshi Ueno

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Doped MLG is expected as an inductor material with high inductance density due to its high kinetic inductance. A practical fabrication process for doped MLG patterns is developed using a selective CVD on Ni catalyst patterns and stable MoCl5 intercalation. The highly doped MLG patterns of stage-2 were realized by CVD-MLG with a G/D ratio of 20 or more, and the sheet-resistance could be reduced.

Original language	English
Title of host publication	2021 IEEE International Interconnect Technology Conference, IITC 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728176321
DOIs	https://doi.org/10.1109/IITC51362.2021.9537349
Publication status	Published - 2021 Jul 6
Event	24th Annual IEEE International Interconnect Technology Conference, IITC 2021 - Virtual, Kyoto, Japan Duration: 2021 Jul 6 → 2021 Jul 9

Publication series

Name	2021 IEEE International Interconnect Technology Conference, IITC 2021

Conference

Conference	24th Annual IEEE International Interconnect Technology Conference, IITC 2021
Country/Territory	Japan
City	Virtual, Kyoto
Period	21/7/6 → 21/7/9

Keywords

CVD
inductor
intercalation doping
MoCl
multilayer graphene

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films

Access to Document

10.1109/IITC51362.2021.9537349

Cite this

Ketsombun, E., Akimoto, T., & Ueno, K. (2021). Fabrication of Highly Doped MLG Patterns Using Selective CVD and MoCl₅Intercalation. In 2021 IEEE International Interconnect Technology Conference, IITC 2021 (2021 IEEE International Interconnect Technology Conference, IITC 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC51362.2021.9537349

Fabrication of Highly Doped MLG Patterns Using Selective CVD and MoCl₅Intercalation. / Ketsombun, Ekkaphop; Akimoto, Tomoki; Ueno, Kazuyoshi.
2021 IEEE International Interconnect Technology Conference, IITC 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 IEEE International Interconnect Technology Conference, IITC 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ketsombun, E, Akimoto, T & Ueno, K 2021, Fabrication of Highly Doped MLG Patterns Using Selective CVD and MoCl₅Intercalation. in 2021 IEEE International Interconnect Technology Conference, IITC 2021. 2021 IEEE International Interconnect Technology Conference, IITC 2021, Institute of Electrical and Electronics Engineers Inc., 24th Annual IEEE International Interconnect Technology Conference, IITC 2021, Virtual, Kyoto, Japan, 21/7/6. https://doi.org/10.1109/IITC51362.2021.9537349

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title = "Fabrication of Highly Doped MLG Patterns Using Selective CVD and MoCl5Intercalation",

abstract = "Doped MLG is expected as an inductor material with high inductance density due to its high kinetic inductance. A practical fabrication process for doped MLG patterns is developed using a selective CVD on Ni catalyst patterns and stable MoCl5 intercalation. The highly doped MLG patterns of stage-2 were realized by CVD-MLG with a G/D ratio of 20 or more, and the sheet-resistance could be reduced.",

keywords = "CVD, inductor, intercalation doping, MoCl, multilayer graphene",

author = "Ekkaphop Ketsombun and Tomoki Akimoto and Kazuyoshi Ueno",

note = "Funding Information: This work was supported by the Research Center for Green Innovation, SIT. Publisher Copyright: {\textcopyright} 2021 IEEE.; 24th Annual IEEE International Interconnect Technology Conference, IITC 2021 ; Conference date: 06-07-2021 Through 09-07-2021",

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