TY - GEN
T1 - Fabrication processes of soi structure for optical nonreciprocal devices
AU - Choowitsakunlert, Salinee
AU - Takagiwa, Kenji
AU - Kobashigawa, Takuya
AU - Hosoya, Nariaki
AU - Silapunt, Rardchawadee
AU - Yokoi, Hideki
N1 - Funding Information:
This work was partially supported by Prof. T. Suga and Dr. M. Fujino, The University of Tokyo for surface activated bonding experiment, and the SIT Research Center for Green Innovation.
Publisher Copyright:
© 2018 Trans Tech Publications, Switzerland.
PY - 2018
Y1 - 2018
N2 - Fabrication processes of a magneto-optic waveguide with a Si guiding layer for an optical isolator employing a nonreciprocal guided-radiation mode conversion are investigated. The optical isolator is constructed on a silicon-on-insulator (SOI) structure. The magneto-optic waveguide is fabricated by bonding the Si guiding layer with a cerium-substituted yttrium iron garnet (Ce: YIG). The relationship of waveguide geometric parameters is determined at a wavelength of 1550 nm. The results show that larger tolerance for isolator operation can be obtained at smaller gaps between Si and Ce: YIG. Bonding processes including photosensitive adhesive bonding and surface activated bonding are then compared. It is found that the surface activated bonding process is easier to control and more promising than the photosensitive adhesive bonding.
AB - Fabrication processes of a magneto-optic waveguide with a Si guiding layer for an optical isolator employing a nonreciprocal guided-radiation mode conversion are investigated. The optical isolator is constructed on a silicon-on-insulator (SOI) structure. The magneto-optic waveguide is fabricated by bonding the Si guiding layer with a cerium-substituted yttrium iron garnet (Ce: YIG). The relationship of waveguide geometric parameters is determined at a wavelength of 1550 nm. The results show that larger tolerance for isolator operation can be obtained at smaller gaps between Si and Ce: YIG. Bonding processes including photosensitive adhesive bonding and surface activated bonding are then compared. It is found that the surface activated bonding process is easier to control and more promising than the photosensitive adhesive bonding.
KW - Photosensitive adhesive bonding
KW - Silicon-on-insulator (SOI)
KW - Surface activated bonding
UR - http://www.scopus.com/inward/record.url?scp=85054883079&partnerID=8YFLogxK
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U2 - 10.4028/www.scientific.net/KEM.777.107
DO - 10.4028/www.scientific.net/KEM.777.107
M3 - Conference contribution
AN - SCOPUS:85054883079
SN - 9783035713718
T3 - Key Engineering Materials
SP - 107
EP - 112
BT - Advanced Materials and Engineering Materials VII
A2 - Wei, Peng Sheng
PB - Trans Tech Publications Ltd
T2 - 7th International Conference on Advanced Materials and Engineering Materials, ICAMEM 2018
Y2 - 17 May 2018 through 18 May 2018
ER -