Flow Characteristics of SiOF Films in Room Temperature Chemical Vapor Deposition Utilizing Fluorotrialkoxysilane Group and Pure Water as Gas Sources

T.Homma T.Homma; R.Yamaguchi R.Yamaguchi; Y.Murao Y.Murao; Tetsuya Homma

Flow Characteristics of SiOF Films in Room Temperature Chemical Vapor Deposition Utilizing Fluorotrialkoxysilane Group and Pure Water as Gas Sources

T.Homma T.Homma, R.Yamaguchi R.Yamaguchi, Y.Murao Y.Murao, Tetsuya Homma

Functional Control Systems

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	3599-3603
Journal	Journal of The Electochemical Society
Volume	140
Publication status	Published - 1993 Dec 1

Cite this

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title = "Flow Characteristics of SiOF Films in Room Temperature Chemical Vapor Deposition Utilizing Fluorotrialkoxysilane Group and Pure Water as Gas Sources",

author = "T.Homma T.Homma and R.Yamaguchi R.Yamaguchi and Y.Murao Y.Murao and Tetsuya Homma",

year = "1993",

month = dec,

day = "1",

language = "English",

volume = "140",

pages = "3599--3603",

journal = "Journal of The Electochemical Society",

}

TY - JOUR

T1 - Flow Characteristics of SiOF Films in Room Temperature Chemical Vapor Deposition Utilizing Fluorotrialkoxysilane Group and Pure Water as Gas Sources

AU - T.Homma, T.Homma

AU - R.Yamaguchi, R.Yamaguchi

AU - Y.Murao, Y.Murao

AU - Homma, Tetsuya

PY - 1993/12/1

Y1 - 1993/12/1

M3 - Article

VL - 140

SP - 3599

EP - 3603

JO - Journal of The Electochemical Society

JF - Journal of The Electochemical Society

ER -