Formation mechanisms of paramagnetic defect centers induced by excimer lasers, gamma rays, and mechanical fracturing in amorphous SiO2

Hiroyuki Nishikawa; Eiki Watanabe; Daisuke Ito; Yoshimichi Ohki

doi:10.1002/(SICI)1520-6416(19971130)121:3<9::AID-EEJ2>3.0.CO;2-8

Formation mechanisms of paramagnetic defect centers induced by excimer lasers, gamma rays, and mechanical fracturing in amorphous SiO₂

Hiroyuki Nishikawa, Eiki Watanabe, Daisuke Ito, Yoshimichi Ohki

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The formation mechanisms of paramagnetic defect centers in amorphous SiO₂ induced by excimer lasers, ⁶⁰Co γ rays, and mechanical fracturing were investigated. Correlation between the paramagnetic defect centers and their precursors introduced during manufacture is discussed for the cases of excimer lasers and γ rays. For the case of mechanical fracturing, formation of strained Si-O-Si bonds as well as paramagnetic defects is examined. The mechanism of laser- or γ-ray-induced paramagnetic defect centers is compared with that of fracture-induced centers.

Original language	English
Pages (from-to)	9-19
Number of pages	11
Journal	Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)
Volume	121
Issue number	3
DOIs	https://doi.org/10.1002/(SICI)1520-6416(19971130)121:3<9::AID-EEJ2>3.0.CO;2-8
Publication status	Published - 1997 Jan 1
Externally published	Yes

Keywords

Amorphous SiO
Electron spin resonance
Excimer laser: Co γ ray
Mechanical stress
Optical absorption
Paramagnetic defect center

ASJC Scopus subject areas

Energy Engineering and Power Technology
Electrical and Electronic Engineering

Access to Document

10.1002/(SICI)1520-6416(19971130)121:3<9::AID-EEJ2>3.0.CO;2-8

Cite this

Formation mechanisms of paramagnetic defect centers induced by excimer lasers, gamma rays, and mechanical fracturing in amorphous SiO₂. / Nishikawa, Hiroyuki; Watanabe, Eiki; Ito, Daisuke et al.
In: Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi), Vol. 121, No. 3, 01.01.1997, p. 9-19.

Research output: Contribution to journal › Article › peer-review

Nishikawa, H, Watanabe, E, Ito, D & Ohki, Y 1997, 'Formation mechanisms of paramagnetic defect centers induced by excimer lasers, gamma rays, and mechanical fracturing in amorphous SiO₂', Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi), vol. 121, no. 3, pp. 9-19. https://doi.org/10.1002/(SICI)1520-6416(19971130)121:3<9::AID-EEJ2>3.0.CO;2-8

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