Formation of nanovoids in femtosecond laser-irradiated single crystals of silicon carbide

Tatsuya Okada, Takuro Tomita, Shigeki Matsuo, Shuichi Hashimoto, Ryota Kashino, Takuto Ito

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Scanning transmission electron microscopy was carried out to study the three-dimensional microstructures of periodic strained layers induced by the irradiation of femtosecond laser pulses inside a silicon carbide single crystal. The cross section of laser-irradiated line consisted of a shell-shaped modified region surrounding a core region with no modification. The laser-modified region was composed of strained layers with a typical spacing of 200 nm. Nanovoids from 10 nm to 20 nm in diameter were observed. Three-dimensional tomographic images clearly show the plate-like shape of strained layers extending parallel to the electric field of the laser light and the random distribution of nanovoids in the strained layers. The three-dimensional observation provides insight into the formation mechanisms of periodic microstructures.

Original languageEnglish
Title of host publicationDefects-Recognition, Imaging and Physics in Semiconductors XIV
Pages19-22
Number of pages4
DOIs
Publication statusPublished - 2012 Dec 1
Externally publishedYes
Event14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14 - Miyazaki, Japan
Duration: 2011 Sept 252011 Sept 29

Publication series

NameMaterials Science Forum
Volume725
ISSN (Print)0255-5476

Conference

Conference14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14
Country/TerritoryJapan
CityMiyazaki
Period11/9/2511/9/29

Keywords

  • Femtosecond laser
  • Nanovoid
  • Silicon carbide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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