Abstract
Characterization of femtosecond laser-modified areas on silicon carbide (SiC) was carried out through Fourier transform infrared reflectance spectra. The sample scanning was carried out during femtosecond laser irradiation to make larger modified area in order to evaluate the changes of the spectra by Fourier transform infrared spectrometer. The spectra were well fitted by the analytical function which is calculated through the dielectric functions of SiC including the effect from free carriers. The obtained parameters indicated that the enhancement of damping constant of longitudi-nal optical phonons after laser irradiation. This enhancement is due the degradation of crystallinity of SiC. The strong correlation between the direction of modified lines and the polarization of infra-red probe light was found. This correlation opens the possible application of femtosecond laser-modification in SiC for control the optical properties in infrared region.
| Original language | English |
|---|---|
| Pages (from-to) | 182-185 |
| Number of pages | 4 |
| Journal | Journal of Laser Micro Nanoengineering |
| Volume | 4 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2009 |
| Externally published | Yes |
Keywords
- Femtosecond laser
- Fourier transform infrared (FTIR) spectros-copy
- Silicon carbide (SiC)
ASJC Scopus subject areas
- Instrumentation
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering