TY - GEN
T1 - Fracture Analysis of Vertical Direction Crack in Die Attach Joint for Power Semiconductor Device
AU - Sugimoto, Hiroshige
AU - Kariya, Yoshiharu
AU - Hanada, Ryuichiro
AU - Fukumoto, Akihisa
AU - Ito, Yusaku
AU - Soda, Shinnosuke
PY - 2019/5
Y1 - 2019/5
N2 - A mechanism of the vertical direction fracture in die attach was investigated. A crack occurred in the metallic compound/\beta -Sn interface by the stress in \beta -Sn dendrite boundary. By the growth of the crack, a cross-shaped damage occurred. The growth of the cross-shaped damage seemed to have caused a vertical direction fracture.
AB - A mechanism of the vertical direction fracture in die attach was investigated. A crack occurred in the metallic compound/\beta -Sn interface by the stress in \beta -Sn dendrite boundary. By the growth of the crack, a cross-shaped damage occurred. The growth of the cross-shaped damage seemed to have caused a vertical direction fracture.
UR - http://www.scopus.com/inward/record.url?scp=85068384046&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85068384046&partnerID=8YFLogxK
U2 - 10.23919/LTB-3D.2019.8735334
DO - 10.23919/LTB-3D.2019.8735334
M3 - Conference contribution
AN - SCOPUS:85068384046
T3 - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
BT - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Y2 - 21 May 2019 through 25 May 2019
ER -