TY - GEN
T1 - Frequency-tunable terahertz wave generation via excitation of phonon-polaritons in GaP and beam properties
AU - Tanabe, T.
AU - Suto, K.
AU - Nishizawa, J.
AU - Saito, K.
AU - Kimura, T.
N1 - Funding Information:
This work was supported by a Grant-in-Aid for creative Scientific Research (No. 13GS0002) from the Japan Society for the Promotion of Science.
Publisher Copyright:
© 2004 IEEE.
PY - 2003
Y1 - 2003
N2 - High-power, frequency-tunable terahertz (THz) waves over the range from 0.3 to 7.5 THz were generated based on difference-frequency generation in GaP crystals using a YAG laser and an optical parametric oscillator. The THz-wave linewidth was estimated to 3.2 GHz and spatial distribution is discussed. We measured the absorption coefficient of the GaP as well as spectra of polytetrafluroethylene (PTFE) in the THz frequency region.
AB - High-power, frequency-tunable terahertz (THz) waves over the range from 0.3 to 7.5 THz were generated based on difference-frequency generation in GaP crystals using a YAG laser and an optical parametric oscillator. The THz-wave linewidth was estimated to 3.2 GHz and spatial distribution is discussed. We measured the absorption coefficient of the GaP as well as spectra of polytetrafluroethylene (PTFE) in the THz frequency region.
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U2 - 10.1109/ISCSPC.2003.1354453
DO - 10.1109/ISCSPC.2003.1354453
M3 - Conference contribution
AN - SCOPUS:84979258301
T3 - IEEE International Symposium on Compound Semiconductors, Proceedings
SP - 193
EP - 196
BT - 2003 30th International Symposium on Compound Semiconductors, ISCS 2003
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 30th International Symposium on Compound Semiconductors, ISCS 2003
Y2 - 25 August 2003 through 27 August 2003
ER -